Photomask and method for creating a protective layer on the same

Abstract

A photomask and method for creating a protective layer on the photomask are disclosed. The method includes placing a photomask including a patterned layer formed on at least a portion of a substrate in a chamber. Oxygen is introduced into the chamber proximate the patterned layer and the photomask is exposed to radiant energy that initiates a reaction between the oxygen and the patterned layer in order to passivate the patterned layer and prevent optical properties of the patterned layer from being altered by a cleaning process.

Description

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AI Technical Summary

Benefits of technology

This patented method involves creating an oxide film (a thin coating) over the entire area where some parts of the mask have been removed during manufacturing processes for semiconductor devices such as integrated circuits. By exposure to light with high intensity, this oxidized portion becomes harder than others without it being affected negatively due to factors like abrasions. To prevent damage to sensitive areas, there should also be enough protection against corrosion attacks while still allowing clear access when needed. Additionally, if any defects occur after processing, they must be repairable through re-cleaning techniques.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the accuracy and reliability of forming high-quality opaque layers (such as chrome) over large areas of silicon wafers due to impurity particles introduced into them when they pass through the etchings step after being processed. These impurities affect how well the light passes through the transparent materials like those made up of chromium plating. To address this issue, it has been proposed to improve the purity level of certain regions within the structure's underlying film while minimizing variations in other parameters involved in processing steps.

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