Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits

A technology of integrated circuits and carbon nanotubes, applied in the application field of self-assembled nanowires, can solve problems such as prolonging time and increasing research and development costs

Inactive Publication Date: 2006-03-01
NANOCONDUCTION
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This complex design process has lengthened the time it takes to bring new products to market, significantly increasing research and development costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
  • Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
  • Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] It is an object of the present invention to provide a structure of a power generating semiconductor junction adjacent to the power generating semiconductor junction of an integrated circuit chip which is specifically designed to conduct heat to the outer surface of the chip. Such structures are compatible with current semiconductor fabrication techniques, offer significantly reduced thermal resistance, and are less costly.

[0032] figure 1 is a partial cross-sectional view of an integrated circuit structure 100 having thermally conductive carbon nanotube filled vias 116a, 116b, wherein the vias are located over transistor junctions, in accordance with one embodiment of the present invention. The silicon substrate 102 of the integrated circuit structure supports an active device layer 106 within which high power transistor junctions are fabricated. Typically, a high speed integrated circuit will have many transistors that must dissipate relatively high power levels. T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to the conduction of heat within the structure of an integrated circuit. The invention discloses a heat conduction device and a method of fabricating same, that utilizes thermally conductive vias to extract heat from local power generating regions of the substrate to top or bottom surfaces of the integrated circuit die. Conductive vias contain self-assembled carbon nanotubes for the enhancement of heat conduction out of the integrated circuit.

Description

technical field [0001] The present invention relates to the transmission of thermal and electrical signals within integrated circuit structures. More specifically, the present invention discloses the use of self-assembled nanowires for facilitating heat conduction from integrated circuits and for increasing the speed of electrical signals propagating within integrated circuits. Background technique [0002] Existing techniques for cooling semiconductor ICs incorporate the use of large and expensive chip packages with externally mounted finned heat sinks connected to ceramic or plastic packaged IC chips. As the speed and density of modern integrated circuits increase, so does the power generated by these chips, often in proportion to the increased density and functionality. In the range of video processing and CPU applications, the ability to dissipate the heat generated by current ICs has become a severe limitation in the development of technology. While some aspects of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/4763H01L21/44H01L21/48H01L23/48H01L21/768H01L23/367H01L23/522H01L23/532
CPCH01L23/5226H01L2924/0002H01L21/76838B82Y10/00H01L2221/1094H01L21/76879H01L23/3677H01L23/53276H01L2924/00H01L23/34H01L21/18H01L27/04B82Y30/00
Inventor C·丹格洛
Owner NANOCONDUCTION