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Method of forming a ta2o5 comprising layer

A ta2o5, deposition chamber technology, applied in coating, metal material coating process, gaseous chemical plating, etc.

Inactive Publication Date: 2010-07-21
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Typically prior art methods of forming tantalum pentoxide result in initial deposition in the amorphous phase and also result in a dielectric constant at the lower end of the range

Method used

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  • Method of forming a ta2o5 comprising layer
  • Method of forming a ta2o5 comprising layer
  • Method of forming a ta2o5 comprising layer

Examples

Experimental program
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Embodiment Construction

[0015] refer to figure 1 , began to describe the formation of Ta-containing 2 o 5 Exemplary method for layers. Shown diagrammatically is a deposition chamber 10 with a substrate 12, such as a semiconductor substrate, disposed therein. In the context of this document, the term "semiconductor substrate" or "semiconductive substrate" is defined to mean any structure containing semiconductor material, including but not limited to bulk semiconductor material, such as a semiconductor wafer (which can be components of other materials alone or thereon) and layers of semiconducting material (which may be alone or components of other materials thereon). The term "substrate" refers to any supporting structure including, but not limited to, the semiconductor substrates described above.

[0016] In making containing Ta 2 o 5 Under the condition that the layer 14 is effectively deposited on the substrate 12, the supply comprising TaF 5 and selected from H 2 O and O 3 A gaseous prec...

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Abstract

A substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF5 and at least one of H2O and 03 are fed to the deposition chamber under conditions effective to deposit a Ta205 comprising layer on the substrate. A substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate within the chamber to form a first species monolayer from a gaseous first precursor comprising TaF5. The chemisorbed first species is contacted with a gaseous second precursor comprising at least one of H20 and 03 to react with the first species to form a monolayer comprising Ta and 0. The chernisorbing and contacting are successively repeated under conditions effective to form a mass of material on the substrate comprising Ta205.

Description

technical field [0001] The present invention relates to the formation of 2 o 5 method of the layer. Background technique [0002] As the memory cell density of dynamic random access memory (DRAM) increases, there is a continuing challenge to maintain sufficiently high storage capacity despite decreasing cell area. In addition, a continuing goal is to further reduce the cell area. One major method of increasing cell capacity is through cell construction techniques. The technology includes three-dimensional cell capacitors, such as trenched or stacked capacitors. However, as feature sizes continue to get smaller, it is also important to develop improved materials for cell dielectrics and cell structures. Highly integrated memories are expected to require very thin electrolyte films for 3-dimensional capacitors in cylindrical-trench or stacked structures. To meet this need, the capacitor electrolyte film thickness can be equal to or lower than 10 angstroms equivalent SiO ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/44C23C16/511
CPCC23C16/405C23C16/511C23C16/45536C23C16/52
Inventor B·A·瓦尔特斯卓T·T·多恩
Owner MICRON TECH INC