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Polishing method

A technology of mechanical polishing and polishing composition, which is applied in the field of polishing and can solve problems such as reducing surface smoothness and increasing line resistance

Inactive Publication Date: 2006-05-10
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can increase the line resistance or reduce the smoothness of the surface

Method used

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  • Polishing method

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Embodiment Construction

[0009] An embodiment of the present invention will now be described.

[0010] In this embodiment mode, a semiconductor device line is formed as follows. First, if figure 1 As shown in A, a barrier layer 13 and a conductive layer 14 are formed on the insulating layer 12 having the trench 11 .

[0011] The insulating layer 12 is formed of, for example, silicon dioxide by chemical vapor deposition (CVD). Using, for example, a lithography technique and a pattern etching technique, the trench 11 is formed on the insulating layer 12 to have a predetermined design pattern.

[0012] Before forming the conductive layer 14 , the barrier layer 13 is formed on the insulating layer 12 and located between the insulating layer 12 and the conductive layer 14 . The barrier layer 13 is formed of, for example, tantalum or tantalum nitride using a sputtering technique. It is required to make the thickness of the barrier layer 13 sufficiently smaller than the depth of the trench 11 .

[0013]...

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Abstract

A method for chemically and mechanically polishing an object to form a circuit of a semiconductor device, comprising: removing part of the outer side of the conductive layer by chemical and mechanical polishing to expose an upper surface of the barrier layer; and after removing part of the outer side of the conductive layer, The remaining portion of the outer portion of the conductive layer and the outer portion of the barrier layer are removed by chemical and mechanical polishing to reveal the upper surface of the insulating layer. When part of the outer side of the conductive layer is removed, the upper surface of the object is chemically and mechanically polished using the first polishing composition containing a film-forming agent. Subsequently, the upper surface of the chemically and mechanically polished object is cleaned, thereby removing the protective film formed on the upper surface of the conductive layer by the film-forming agent in the first polishing composition. Then, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing a film former. Thus, the semiconductor device wiring is well formed.

Description

technical field [0001] The present invention relates to a method for chemically and mechanically polishing an object to form a circuit of a semiconductor device. Background technique [0002] The circuit of the semiconductor device is first formed by sequentially placing a barrier layer and a conductive layer on an insulating layer having a trench. Then, part of the conductive layer outside the trench (conductive layer outside) and part of the barrier layer outside the trench (barrier outside) are removed by chemical and mechanical polishing. The process of removing the outer side of the conductive layer and the outer side of the barrier layer generally includes the steps of removing part of the outer side of the conductive layer by chemical and mechanical polishing to reveal the upper surface of the barrier layer, and removing the remaining outer side of the conductive layer and the barrier layer by chemical and mechanical polishing The step ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B37/00B24B37/005H01L21/302H01L21/304
CPCH01L21/02074H01L21/3212H01L21/7684H01L21/304
Inventor 吴俊辉河村笃纪松田刚平野达彦堀和伸酒井谦儿
Owner FUJIMI INCORPORATED