Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses

A switch and electrode technology, applied in the field of metal oxide semiconductor field effect transistors, can solve the problem of reducing the channel width and achieve the effect of less switching time and switching loss
CN1809928AInactive Publication Date: 2006-07-26FAIRCHILD SEMICON CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FAIRCHILD SEMICON CORP
Publication Date
2006-07-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

A semiconductor gate structure includes a shielding electrode and a switching electrode. Portions of a shield electrode are located over the drain region and the well region. The first dielectric layer is located between the shielding electrode and the drain and well regions. Portions of switch electrodes are located over the well region and the source region. A second dielectric layer is located between the switch electrode and the well and source regions. A third dielectric layer is located between the shield electrode and the switch electrode.
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Description

[0001] Related patent application reference

[0002] This patent application claims the benefit of priority to US Provisional Patent Application Serial No. 60 / 405,369, filed August 23,2002. technical field

[0003] This invention relates to semiconductors, and more particularly to metal oxide semiconductor field effect transistors (MOSFETs). Background technique

[0004] MOSFETs are widely used in the field of switching, for example, switching power supplies hardly use other types of transistors. MOSFETs are suitable for this switching application because they have a relatively high switching speed and require low power. However, dynamic losses in MOSFETs account for a large percentage of the total losses in a DC-DC converter. The dynamic loss is directly proportional to the rise and fall time of the device, and the rise and fall time of the device is proportional to the gate-drain capacitance of the device, that is, the Miller capacitance (C GD or Q GD ) proportional to...

Claims

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