IGBT (Insulated Gate Bipolar Translator) device with MOS (Metal Oxide Semiconductor) control hole path

A device and channel technology, applied in the field of power semiconductor devices, can solve the problems of large switching loss and reduced withstand voltage of devices, and achieve the effects of reducing saturated conduction voltage drop, compatible manufacturing process, and reducing turn-off loss

Active Publication Date: 2019-05-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the foregoing, the present invention provides an IGBT with a MOS-controlled hole path for the existing discrete floating P-region trench

Method used

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  • IGBT (Insulated Gate Bipolar Translator) device with MOS (Metal Oxide Semiconductor) control hole path
  • IGBT (Insulated Gate Bipolar Translator) device with MOS (Metal Oxide Semiconductor) control hole path
  • IGBT (Insulated Gate Bipolar Translator) device with MOS (Metal Oxide Semiconductor) control hole path

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0032] Example 1:

[0033] An IGBT device with MOS controlled hole path, such as figure 2 As shown, the cell structure includes a metal collector 7, a P+ collector region 6, an N-type buffer layer 5, an N-drift region 4, and a metal emitter 11 that are sequentially stacked from bottom to top; the N-drift region 4 The middle area of ​​the top layer is provided with a P+ floating pbody region 8, two sides of the P+ floating pbody region 8 are respectively provided with a P+ base region 2, and the top layer of the P+ base region 2 is provided with an N+ emitter region 1; The region 2 and the N+ emitter region 1 are in contact with the metal emitter 11; the P+ base region 2 and the N+ emitter region 1 are provided with an IGBT gate structure between the P+ floating pbody region 8 and the P+ floating pbody region 8 Not adjacent to the gate structure, the gate structure includes a gate electrode 9 and a gate dielectric layer 3. The gate dielectric layer 3 extends in the vertical direc...

Example Embodiment

[0051] Example 2

[0052] Such as image 3 As shown, the difference between this embodiment and Embodiment 1 is that the MOS control gate electrode 14 adopts a sharp-angle MOS control gate structure to further reduce the Miller capacitance.

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Abstract

The invention provides an IGBT (Insulated Gate Bipolar Translator) device with a MOS (Metal Oxide Semiconductor) control hole path, and belongs to the technical field of power semiconductor devices. AMOS control gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel area is introduced into a P+ floating pbody area of a traditional IGBT device, anda MOS region is equivalent to a switch under gate voltage control. When the device is conducted forwardly, the potential of the pbody area floats, so that hole storage is realized, and the saturated on-off voltage drop of the device is reduced. When the device is off and short-circuited, a hole discharge path is provided; the Miller capacitance is reduced; and the low on-off loss and more stable short circuit capability are realized.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to an IGBT device with a MOS-controlled hole path. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is widely used in important fields such as rail transit, smart grid, and wind power generation due to its advantages of easy gate drive, high input impedance, high current density, and low saturation voltage. It has become one of the mainstream power switching devices in the medium and high power range, and will continue to develop in the direction of high voltage and high current, low power loss, high operating temperature and high reliability. [0003] The planar gate structure is a mature structure often used in high-voltage IGBTs. It is used in high-reliability environments such as high-speed rail and power transmission. However, due to the parasitic MOS resistance of the planar gate IGBT, compared with the slot gate structure,...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/331H01L29/739
CPCH01L29/0619H01L29/083H01L29/1095H01L29/417H01L29/42376H01L29/7397H01L29/4236
Inventor 李泽宏彭鑫赵一尚任敏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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