Trench gate igbt device with pnp punchthrough transistor

A triode and trench gate technology, applied in the direction of diodes, semiconductor devices, electric solid state devices, etc., can solve the problems of high switching loss and affecting the on-state characteristics of devices, and achieve the reduction of saturated conduction voltage drop, compatible manufacturing process, and low Effect of Leakage Current

Active Publication Date: 2021-02-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] In view of the above, the present invention provides a trench with a PNP punch-through triode for the existing discrete floating P-region TIGBT devices due to the potential changes in the P-region affecting the on-state characteristics of the device and large switching losses. Gate IGBT Device

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  • Trench gate igbt device with pnp punchthrough transistor
  • Trench gate igbt device with pnp punchthrough transistor
  • Trench gate igbt device with pnp punchthrough transistor

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Embodiment Construction

[0029] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0030] A trench gate IGBT device with a PNP punch-through transistor, the entire cell of which is symmetrical about the cell center line; its cell structure includes metal electrodes 7, P+ collector regions 6, N-type buffer layers 5, N-drift region 4; metal emitter 9, metal electrode 17 and metal connection 18 are located above the N-drift region 4; the top middle region of the N-drift region 4 is provided with a discrete floating Pbod...

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Abstract

The invention belongs to the technical field of power semiconductors, and specifically relates to a trench gate IGBT device with a PNP feedthrough transistor. The invention passes through a P-type second collector area, The N-type second base region and the discrete floating pbody region form a PNP pass-through transistor; when the device is forward-conducting, the PNP transistor does not pass through, and stores holes to enhance conductance modulation, and the diode formed by N+ polysilicon and P+ polysilicon is further reduced Leakage current; when the PNP transistor is turned off, it provides a hole discharge channel, reduces the turn-off time, and improves the anti-latch-up ability of the P-base area; at the same time, the trench dielectric layer prevents the PNP transistor from being latched, so that it does not affect other In the case of better electrical characteristics, the switching time and switching loss are reduced; when the device is in the blocking state, the PNP transistor breaks through, which increases the withstand voltage capability of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a trench gate IGBT device with a PNP through triode. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) combines the advantages of easy driving and control of MOSFET, high input impedance, high current density of GTR, and low saturation voltage. It is widely used in rail transit, new energy vehicles, high-voltage direct current transmission, etc. field. Since the birth of IGBT, its performance has been continuously improved, and it will also develop in the direction of higher voltage, higher current, higher operating temperature, and lower loss. [0003] The gate structure of the high-voltage IGBT can be divided into a planar gate structure and a groove gate structure. Due to the existence of the JFET region in the planar gate IGBT, compared with the trench gate IGBT (Trench IGBT) structure, the saturation voltage drop is higher and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L27/02
CPCH01L27/0255H01L27/0259H01L29/0649H01L29/7397
Inventor 李泽宏孙肇峰赵一尚杨洋莫佳宁何云娇彭鑫
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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