An igbt device with mos controlled hole pathway
A device and path technology, applied in the field of power semiconductor devices, can solve the problems of large switching loss and reduced device withstand voltage, and achieve the effect of reducing the saturated conduction voltage drop, making the manufacturing process compatible, and reducing the turn-off loss.
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Embodiment 1
[0033] An IGBT device with a MOS-controlled hole path, such as figure 2As shown, its cell structure includes a metal collector 7, a P+ collector region 6, an N-type buffer layer 5, an N-drift region 4 and a metal emitter 11 stacked in sequence from bottom to top; the N-drift region 4 has A P+ floating pbody region 8 is arranged in the middle area of the top layer, P+ base regions 2 are respectively arranged on both sides of the P+ floating pbody region 8, and an N+ emission region 1 is arranged on the top layer of the P+ base region 2; Region 2 and N+ emitter region 1 are in contact with metal emitter 11; an IGBT gate structure is provided between the P+ base region 2 and N+ emitter region 1 and the P+ floating pbody region 8, and the P+ floating pbody region 8 Not adjacent to the gate structure, the gate structure includes a gate electrode 9 and a gate dielectric layer 3, the gate dielectric layer 3 extends into the N-drift region 4 along the vertical direction of the devi...
Embodiment 2
[0052] like image 3 As shown, the difference between this embodiment and Embodiment 1 is that the MOS control gate electrode 14 adopts a sharp-angle MOS control gate structure to further reduce the Miller capacitance.
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