igbt device with pnp feedthrough transistor
A technology for triodes and devices, applied in the field of power semiconductors, can solve the problems affecting the conduction state of the device, large switching loss, etc., and achieve the effects of reducing leakage current, reducing saturation conduction voltage drop, and increasing breakdown voltage
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[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0026] An IGBT device with a PNP punch-through transistor, the entire cell of which is symmetrical about the cell centerline; the cell structure includes sequentially stacked metal electrodes 7, P+ collector regions 6, N-type buffer layers 5, and N-drift regions from bottom to top 4; the metal emitter 9, the metal electrode 16 and the metal connection 17 are located above the N-drift region 4; the middle region of the top layer of the ...
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