Power semiconductor device and manufacturing method thereof

A technology of power semiconductors and conductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as excessive switching loss, large turn-off loss, and reduced switching speed of IEGT devices, so as to reduce switching loss , reduce failure, improve the effect of anti-interference ability

Pending Publication Date: 2018-07-31
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Therefore, the switching speed of the IEGT device is reduced, and the turn-off loss is large, so that the overall switching loss is still too large

Method used

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  • Power semiconductor device and manufacturing method thereof
  • Power semiconductor device and manufacturing method thereof
  • Power semiconductor device and manufacturing method thereof

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Embodiment Construction

[0043] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0044] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0045] If it is to describe the situation directly on another layer or an...

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Abstract

The invention discloses a power semiconductor device and a manufacturing method thereof. The power semiconductor device comprises a separation grating structure located in a groove; the separation grating structure comprises a first gate conductor, a second gate conductor and a third gate conductor which are separated mutually; the first part of the first gate conductor is located at the upper part of the groove and is clamped between the second gate conductor and the third gate conductor; and the second part of the first gate conductor extends to the lower part of the groove. The power semiconductor device adopts the separation grating structure to improve the response speed and reduce the switch loss.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, and more specifically, to a power semiconductor device and a manufacturing method thereof. Background technique [0002] Power semiconductor devices are also known as power electronic devices, including power diodes, thyristors, VDMOS (vertical double diffused metal oxide semiconductor) field effect transistors, LDMOS (laterally diffused metal oxide semiconductor) field effect transistors and IGBT (insulated gate bipolar transistors), etc. IGBT is a composite full-control voltage-driven power semiconductor device composed of BJT (bipolar transistor) and FET (field effect transistor). IGBT has the advantages of both BJT and FET, that is, the characteristics of high input impedance and low conduction voltage drop, so it has good switching characteristics, and is widely used in fields with high voltage and high current characteristics, for example, AC motors, frequency con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/423H01L21/331
CPCH01L29/42332H01L29/42336H01L29/66348H01L29/7397
Inventor 顾悦吉杨彦涛陈琛王珏
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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