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Method for fabricating CMOS image sensor

A color filter and metal pad technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems affecting image sensor white uniformity, device uniformity degradation, white uniformity degradation, etc.

Inactive Publication Date: 2006-08-16
DONGBUANAM SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] The pad passivation film formed after the process of forming the device passivation film is thin, thereby degrading the device uniformity and negatively affecting the white uniformity of the image sensor
Also, since the pad passivation film is etched after the formation of the microlens, defects such as lens shadows are generated inside the microlens, and white uniformity is degraded

Method used

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  • Method for fabricating CMOS image sensor
  • Method for fabricating CMOS image sensor
  • Method for fabricating CMOS image sensor

Examples

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Embodiment Construction

[0031] Reference will now be made in detail to the preferred embodiments of the present specification, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0032] Figure 5 to Figure 9 is a cross-sectional view illustrating a method for manufacturing a CMOS image sensor according to a preferred embodiment of the present invention.

[0033]First, the process of forming the metal pad will be briefly introduced. A first epitaxial layer is grown on the semiconductor substrate, and a red photodiode is formed in the first epitaxial layer. Then, a second epitaxial layer is grown on the semiconductor substrate including the red photodiode, and a green photodiode is formed in the second epitaxial layer. A third epitaxial layer is grown on the second epitaxial layer including the green photodiode, and a blue photodiode is formed in the third epitaxial lay...

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Abstract

A method for fabricating a CMOS image sensor includes forming a metal pad on a pad region of a semiconductor substrate having an active region and the pad region, forming an insulating film on an entire surface of the semiconductor substrate including the metal pad, forming an opening to expose the metal pad by etching a portion of the insulating film corresponding to the metal pad, forming a pad passivation film on the insulating film including the opening, forming color filter layers on a portion of the pad passivation film corresponding to the active region, removing a portion of the pad passivation film corresponding to the pad region, and forming microlenses over the color filter layers after removing the portion of the pad passivation film corresponding to the pad region.

Description

[0001] This application claims the benefit of Korean Patent Application No. P2004-117959 filed on December 30, 2004, which is hereby incorporated by reference for all purposes as if fully described herein. technical field [0002] The present invention relates to a method for manufacturing a compensation metal oxide semiconductor (CMOS) image sensor, and more particularly, to a method for manufacturing a CMOS image sensor in which a pad passivation film is formed thickly and a microlens is formed The pad passivation film was previously removed, thus preventing occurrence of microlens defects and obtaining white uniformity, thereby improving image sensor quality and yield. Background technique [0003] Generally, an image sensor is a semiconductor device that converts an optical signal into an electrical signal. Image sensors can be classified into Charge Coupled Devices (CCDs) and CMOS image sensors. The CCD stores charge carriers in the MOS capacitors and transfers the cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822
CPCH01L27/14621H01L27/14627H01L27/14685H01L27/14643H01L27/14689H01L21/31H01L21/768H01L27/146
Inventor 金唇翰
Owner DONGBUANAM SEMICON