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Power diode and manufacturing method

A technology of power diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low stability, unstable high-temperature diffusion, and difficult breakdown voltage control

Inactive Publication Date: 2006-09-13
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the invention uses double-layer epitaxy, so the cost is high, and because the double-layer epitaxy has two layers with different impurity concentrations, it is relatively unstable during high-temperature diffusion, resulting in difficult control of breakdown voltage and low stability

Method used

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  • Power diode and manufacturing method
  • Power diode and manufacturing method
  • Power diode and manufacturing method

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Embodiment Construction

[0030] Please refer to image 3 , is a schematic diagram of the structure of the power diode of the present invention. The present invention includes: a first semiconductor layer 36 , a second semiconductor layer 34 and a third semiconductor layer 32 . Wherein the first semiconductor layer 36 is a semiconductor silicon substrate layer formed by the CZ / FZ / NTD method and is of the first conductivity type. The second semiconductor layer 34 is a semiconductor epitaxial layer, which is grown on the first semiconductor layer 36 by epitaxy, adjacent to the first semiconductor layer, and also has the first conductivity type, and the first conductivity The doping concentration of the type is smaller than the doping concentration of the first semiconductor layer. The third semiconductor layer 32 is a semiconductor diffusion layer, which is formed by second dopant diffusion with different depths, forms a P-N junction in the power diode, and forms a cylindrical curved surface junction ar...

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Abstract

This invention relates to a power diode and its manufacturing method, in which, said method utilizes a formed cylinder P-N junction plane when manufacturing the diode and the curved effect of the P-N junction plane to generate a collapse path of the diode under a reverse bias voltage to control the collapse voltage of the diode and a micro-defect in it does not influence the expansion of exhaust regions to reduce the reverse voltage snap down of power diodes.

Description

technical field [0001] The invention relates to a power diode and a manufacturing method thereof, in particular to a power diode which uses a cylindrical P-N junction to generate a diode collapse path under reverse bias and a manufacturing method thereof. Background technique [0002] A power diode is an electronic component with a wide range of uses, and it is also an important component of an electronic circuit. A good power diode must have the characteristics of low conduction voltage, high switching speed and high breakdown voltage, especially when it is used as a power supply, etc., it needs to have higher breakdown voltage characteristics to avoid the occurrence of external power supply. When there is a surge, the power diode will have an abnormal working condition, causing the circuit of the power supply to malfunction. Therefore, how to design and manufacture a power diode with high breakdown voltage has become an important issue. [0003] Please refer to FIG. 1 , ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329
Inventor 蔡捷弘曾清秋郑鸿龙
Owner LITE ON SEMICON
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