Measurer of dielectric film microwave complex dielectric permittivity

A technology of complex permittivity and dielectric thin film, which is applied in measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., can solve the problems of large measurement errors and the inability to realize the dielectric thin film microwave complex permittivity, and achieve high Sensitivity, the effect of precise measuring devices

Inactive Publication Date: 2006-09-20
ZHEJIANG UNIV
View PDF0 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method provides an alternative solution for the measurement of the microwave complex permittivity of solid dielectrics that can be machined and formed. However, its biggest disadvantage is that the thickness of the sample needs to be on the order of millimeters. level, the measurement error of this method is very large
[0005] Although there...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measurer of dielectric film microwave complex dielectric permittivity
  • Measurer of dielectric film microwave complex dielectric permittivity
  • Measurer of dielectric film microwave complex dielectric permittivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] A device for measuring the microwave complex permittivity of dielectric thin films. The metal resonant cavity 5 is made of a standard rectangular waveguide model 153IEC-R32, and the width a, height b, and length l are 72.14mm, 34.04mm, and 138.52mm respectively. mm, there are 10mm long and 0.5mm wide thin grooves 4 in the middle of the upper and lower planes of the resonant cavity respectively; the dielectric substrate 8 is made of quartz material, and its thickness is d 0 and width l 0 0.46mm and 9.89mm respectively; the model of network analyzer 1 is Agilent 8714ET, which is connected to the rectangular metal resonator 5 through a ring coupler, and the measured dielectric film is MC-91[BaO-(SmNdLa) 2 o 3 -Bi 2 o 3 -TiO 2 ] dielectric ceramic thin film, its thickness Δd is measured by α step meter, and is 810nm, according to the steps of the present invention, adjust the frequency range and the amplitude scale of the network analyzer to an appropriate value, and ca...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

This invention relates to testing equipment of nm order thickness medium thin film microwave complex dielectric permittivity. It includes resonant cavity, net analyzer and medium substrate. Radiofrequency interconnection devices are set on both ends of the cavity, through hole is set in middle part, the substrate is used to burdening medium thin film, the through hole can be through in it and its two ends are out of the cavity. The input and output ends of the analyzer are connected to the two couplers of the cavity. Substrate coated and uncoated can be separately inserted into the through holes of the cavity to get two groups of resonance frequency and quality factor value. Then the medium thin film complex dielectric permittivity can be got by the two data combined with the cavity, substrate and rectangular protractor of the film. The permittivity includes real part and loss angle tangent. So this invention is a general, precision testing device of medium thin film microwave complex dielectric permittivity.

Description

technical field [0001] The invention relates to a measuring device for microwave complex permittivity, in particular to a measuring device for microwave complex permittivity of a dielectric film whose thickness is in the order of microns. Background technique [0002] Thin film and integration are the development trend of radio frequency microwave devices. Accurately measuring the microwave complex permittivity of materials is one of the keys to accurately design microwave devices. So far, although there have been national standards for the measurement of microwave complex permittivity of bulk materials (GB5597-85, etc.), but for It is still an unsolved problem to measure the microwave complex permittivity of thin-film materials whose thickness is on the order of micrometers. [0003] The complex permittivity is defined as ε%=ε 0 ·ε r =ε 0 ·(ε r '-jε r ") = ε 0 ·ε r ′(1-jtanδ), where ε 0 is the dielectric constant in vacuum, its value is 8.854×10 -12 F / m, ε r is t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R27/26
Inventor 王德苗金浩董树荣谢银芳
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap