Measurer of dielectric film microwave complex dielectric permittivity

Abstract

This invention relates to testing equipment of nm order thickness medium thin film microwave complex dielectric permittivity. It includes resonant cavity, net analyzer and medium substrate. Radiofrequency interconnection devices are set on both ends of the cavity, through hole is set in middle part, the substrate is used to burdening medium thin film, the through hole can be through in it and its two ends are out of the cavity. The input and output ends of the analyzer are connected to the two couplers of the cavity. Substrate coated and uncoated can be separately inserted into the through holes of the cavity to get two groups of resonance frequency and quality factor value. Then the medium thin film complex dielectric permittivity can be got by the two data combined with the cavity, substrate and rectangular protractor of the film. The permittivity includes real part and loss angle tangent. So this invention is a general, precision testing device of medium thin film microwave complex dielectric permittivity.

Description

technical field [0001] The invention relates to a measuring device for microwave complex permittivity, in particular to a measuring device for microwave complex permittivity of a dielectric film whose thickness is in the order of microns. Background technique [0002] Thin film and integration are the development trend of radio frequency microwave devices. Accurately measuring the microwave complex permittivity of materials is one of the keys to accurately design microwave devices. So far, although there have been national standards for the measurement of microwave complex permittivity of bulk materials (GB5597-85, etc.), but for It is still an unsolved problem to measure the microwave complex permittivity of thin-film materials whose thickness is on the order of micrometers. [0003] The complex permittivity is defined as ε%=ε 0 ·ε r =ε 0 ·(ε r '-jε r ") = ε 0 ·ε r ′(1-jtanδ), where ε 0 is the dielectric constant in vacuum, its value is 8.854×10 -12 F / m, ε r is t...

AI Technical Summary

Problems solved by technology

This method provides an alternative solution for the measurement of the microwave complex permittivity of solid dielectrics that can be machined and formed. However, its biggest disadvantage is that the thickness of the sample needs to be on the order of millimeters. level, the measurement error of this method is very large

[0005] Although there are still some schemes for measuring the microwave real permittivity of dielectric thin films in the prior art, none of them can realize the microwave complex permittivity of dielectric thin films with a thickness in the order of microns, including the real part of the complex permittivity and the loss angle. Tangent, providing accurate measurements

Images