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Method of fabricating organic light emitting device

A technology of organic light-emitting devices and organic layers, which is applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., and can solve problems such as difficulty in obtaining high-quality insulating layers

Active Publication Date: 2006-10-11
SAMSUNG DISPLAY CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In addition, since the insulating layer contains a large amount of hydrogen, it is difficult to obtain a high-quality insulating layer

Method used

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  • Method of fabricating organic light emitting device
  • Method of fabricating organic light emitting device
  • Method of fabricating organic light emitting device

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Embodiment Construction

[0018] The invention will now be described with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The drawings in themselves are illustrative and should not be construed as limiting the invention. In the drawings, the thicknesses of layers and regions may be exaggerated for convenience of illustration. In addition, the same reference numerals denote the same elements throughout the specification.

[0019] figure 2 is a cross-sectional view of a chemical vapor deposition apparatus used in a method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention. The chemical vapor deposition apparatus can perform plasma decomposition and thermal decomposition simultaneously.

[0020] refer to figure 2 , the chemical vapor deposition apparatus includes a chamber 201 , a shower head 211 , a heating body 221 and a chuck 231 . Each of the shower head 211 , the heating body 221 and...

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Abstract

Methods of fabricating an organic light emitting device using plasma and / or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

Description

[0001] This application claims priority and benefits from Korean Patent Application No. 10-2005-28609 filed in the Korean Intellectual Property Office on Apr. 6, 2005, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a method of manufacturing an organic light emitting device. More particularly, the present invention relates to a method of manufacturing an organic light emitting device in which a hybrid chemical vapor deposition apparatus forms an insulating passivation layer on a substrate on which an organic light emitting device is formed using plasma and / or heat superior. Background technique [0003] Plasma atmosphere is widely used in thin film-related fields such as chemical vapor deposition process, etching process and surface treatment process, because plasma atmosphere can improve the reaction efficiency of these processes and enable thes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L21/31
CPCC23C16/45565C23C16/45574C23C16/5096H01L51/5237H10K59/873A47G9/1081A61F5/56H10K50/844
Inventor 金汉基许明洙金明洙李奎成
Owner SAMSUNG DISPLAY CO LTD
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