Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for controlling roughness of computer hard disk substrate

A control method and computer technology, which can be applied to manufacturing tools, machine tools for surface polishing, polishing compositions containing abrasives, etc., can solve problems such as the inability to meet the requirements of memory hard disks, etc., to improve polishing effects, reduce surface roughness, and solve scratches. Difficulty cleaning effect after injury

Inactive Publication Date: 2006-11-22
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As hard disk manufacturers improve the surface processing quality of memory hard disk substrates, the control of the final surface r

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) SiO with a particle size of 15-20nm 2 Dilute 1000g with 50g deionized water;

[0031] (2) add the FA / O surfactant of 4g while stirring;

[0032] (3) add the FA / O chelating agent of 5g while stirring;

[0033] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;

[0034] (5) After adjusting the pH, add 10ml of hydrogen peroxide oxidizing agent;

[0035] (6) Use the above polishing solution to polish the substrate on a polishing machine for 8-10 minutes under the polishing process conditions of 30-40°C temperature, 30-40rpm speed, and 1L / min-2L / min flow rate, and the roughness achieved is 0.15nm.

Embodiment 2

[0037] (1) SiO with a particle size of 30-40nm 2 Dilute 500g with 500g deionized water;

[0038] (2) Add 10 g of FA / O surfactant while stirring;

[0039] (3) Add 10g of FA / O chelating agent while stirring;

[0040] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;

[0041] (5) After adjusting the pH, add 5ml of sodium peroxypyrophosphate solution oxidant;

[0042] (6) Use the above-mentioned polishing solution to polish the substrate on a polishing machine for 8-10 minutes under the polishing process conditions of 40-50°C temperature, 50-60rpm rotation speed, 0.05MPa, and 3L / min-4L / min flow rate, and the achieved The roughness is 0.12nm.

Embodiment 3

[0044] (1) SiO with a particle size of 20-30nm 2 Dilute 2000g with 1000g deionized water;

[0045] (2) add the JFC surfactant of 30g while stirring;

[0046] (3) add the FA / O chelating agent of 30g while stirring;

[0047] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;

[0048] (5) After adjusting the pH, add 15ml of hydrogen peroxide oxidizing agent;

[0049] (6) Use the above polishing solution to polish the substrate on a polishing machine for 8 to 10 minutes under the polishing process conditions of 40-50°C temperature, 70-80rpm rotation speed, 0.02MPa, and 4L / min-5L / min flow rate to achieve The roughness is 0.1nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for controlling the roughness of basic plate of hard disk of computer, which comprises following steps that: diluting the deionized water by SiO2 whose diameter is 15-40nm, while the deionized water content is 5-50% in mass; mixing and adding 1-10% mellow aether surface activator, mixing and adding 1-10% of FA/O chelated agent; using pH adjusting agent to make the pH value between 9.5-10.5; adding 5-15ml oxidant; using aforementioned polishing liquid to polish the basic plate for 8-10mins on the polisher, at 30-40Deg. C, 30-80rpm, 0-0.05MPa, and 1L/min-5L/min flux. The invention has lower pollution, which can reduce the surface roughness of hard disk.

Description

technical field [0001] The invention relates to the technical field of computer storage hard disk manufacturing, and more specifically relates to a method for reducing the chemical mechanical polishing roughness of a computer hard disk NiP substrate. Background technique [0002] A flat and smooth disk substrate without any surface defects is the basis for storing data in the magnetic layer, and improving the surface flatness of the disk substrate also increases the storage density. Chemical Mechanical Polishing (CMP) technology can meet the processing requirements of disk substrates in terms of processing performance and speed, and form a smooth and flat surface on the grinding surface. It is currently the best method to achieve global planarization. [0003] In order to reduce the minimum recording area of ​​the hard disk drive and increase the capacity of the hard disk, the distance between the magnetic head and the magnetic medium of the magnetic disk is required to be f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B29/02C09G1/02C09G1/04
Inventor 刘玉岭刘长宇
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products