Method for controlling roughness of computer hard disk substrate
A control method and computer technology, which can be applied to manufacturing tools, machine tools for surface polishing, polishing compositions containing abrasives, etc., can solve problems such as the inability to meet the requirements of memory hard disks, etc., to improve polishing effects, reduce surface roughness, and solve scratches. Difficulty cleaning effect after injury
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Embodiment 1
[0030] (1) SiO with a particle size of 15-20nm 2 Dilute 1000g with 50g deionized water;
[0031] (2) add the FA / O surfactant of 4g while stirring;
[0032] (3) add the FA / O chelating agent of 5g while stirring;
[0033] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;
[0034] (5) After adjusting the pH, add 10ml of hydrogen peroxide oxidizing agent;
[0035] (6) Use the above polishing solution to polish the substrate on a polishing machine for 8-10 minutes under the polishing process conditions of 30-40°C temperature, 30-40rpm speed, and 1L / min-2L / min flow rate, and the roughness achieved is 0.15nm.
Embodiment 2
[0037] (1) SiO with a particle size of 30-40nm 2 Dilute 500g with 500g deionized water;
[0038] (2) Add 10 g of FA / O surfactant while stirring;
[0039] (3) Add 10g of FA / O chelating agent while stirring;
[0040] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;
[0041] (5) After adjusting the pH, add 5ml of sodium peroxypyrophosphate solution oxidant;
[0042] (6) Use the above-mentioned polishing solution to polish the substrate on a polishing machine for 8-10 minutes under the polishing process conditions of 40-50°C temperature, 50-60rpm rotation speed, 0.05MPa, and 3L / min-4L / min flow rate, and the achieved The roughness is 0.12nm.
Embodiment 3
[0044] (1) SiO with a particle size of 20-30nm 2 Dilute 2000g with 1000g deionized water;
[0045] (2) add the JFC surfactant of 30g while stirring;
[0046] (3) add the FA / O chelating agent of 30g while stirring;
[0047] (4) Adjust the above solution with tetrakis(tetrahydroxyethylethylenediamine) ethylenediaminetetraacetic acid so that the pH value is within the range of 9.5 to 10.5;
[0048] (5) After adjusting the pH, add 15ml of hydrogen peroxide oxidizing agent;
[0049] (6) Use the above polishing solution to polish the substrate on a polishing machine for 8 to 10 minutes under the polishing process conditions of 40-50°C temperature, 70-80rpm rotation speed, 0.02MPa, and 4L / min-5L / min flow rate to achieve The roughness is 0.1nm.
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