Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrostatic discharge protection process and device for the improvement of a semiconductor circuit

An ESD protection, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as occupation and large area

Inactive Publication Date: 2006-12-06
INFINEON TECH AG
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the required increased distance of a few millimeters between the drain contact hole 5 and the gate 3 is added to the width, a considerable area is taken up in the I / O library by ESD safe measurements alone

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic discharge protection process and device for the improvement of a semiconductor circuit
  • Electrostatic discharge protection process and device for the improvement of a semiconductor circuit
  • Electrostatic discharge protection process and device for the improvement of a semiconductor circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Figure 4 shows a first embodiment of a cross-sectional view of an ESD protection device 1 according to the invention comprising a figure 2 The field effect transistors shown in are similar to field effect transistors (more specifically NFETs), and thus like reference numerals refer to like parts. except in figure 2 The ESD protection device 1’ shown in the Figure 4 The ESD protection device 1 shown in includes a series of contact holes 8 arranged near the hot spots 7 . Of course only one contact hole 8 is visible in the sectional view of the tungsten-filled contact hole 8, because Figure 4 is the reason for the section representation.

[0043] in similar to image 3 In the representation of an embodiment of the ESD protection device 1 according to the present invention, the contact hole 8 for heat dissipation is arranged parallel to the drain contact hole 5 between the gate 3 and the drain contact hole 5 near the gate 3 or Series of source contact holes 6 ser...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An ESD protection device diverts an overvoltage present on a semiconductor circuit by a heat conducting arrangement arranged in the ESD protection device. The heat conducting arrangement includes contact holes filled with metal and arranged in the vicinity of a hotspot of the ESD protection device to divert heat from the hotspot. The hotspot is thus a critical point with regard to temperature on a discharge path via which the overvoltage is diverted in the case of an ESD.

Description

technical field [0001] The present invention relates to a process and a protection device, which can protect semiconductor circuits from the influence of ESD better than the effect achieved by the current prior art. Background technique [0002] From the prior art it is known that integrated circuits must be protected against electrostatic discharge (ESD). On the one hand, protection from ESD is achieved by appropriate regulations regarding the handling of semiconductor circuits. With regard to ESD, on the other hand, this is frequently achieved by providing the integrated circuits with a certain inherent strength by product-specific and technology-specific ESD protection concepts, which mostly result from "on-chip" integration. [0003] In the following description, an ESD protection device or an ESD protection network can be understood as a component structure that conducts an ESD current in the event of an ESD. Thus, in the case of ESD, the components conducting the ESD...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/60H01L23/62H01L23/36H01L21/82
CPCH01L2924/0002H01L29/7835H01L29/0692H01L29/78H01L23/3677H01L2924/00
Inventor K·埃斯马克M·施特赖布尔
Owner INFINEON TECH AG