Dual mosaic structure, interconnect structure and methods for fabricating the same

Abstract

The present invention relates to interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to an interconnect structure in an integrated circuit. Background technique [0002] As the size of integrated circuit devices shrinks, the arrangement of conductive interconnects such as metal wires within the integrated circuit device becomes closer and the horizontal spacing between them is further reduced. In this way, the capacitance of the structure between the conductive interconnects increases, which causes RC delay time and crosstalk effect. In order to solve the above problems, the traditional silicon dioxide material (dielectric constant is about 4) has been replaced by a dielectric material with a low dielectric constant in today's interconnect manufacturing technology, so as to reduce the capacitance of the structure between conductive interconnects value. [0003] Compared with traditional silicon dioxide materials, most low-k dielectric materials exhibit high...

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Problems solved by technology

If such tensile stress continues to accumulate in the semiconductor structure, it will cause deformation (deformation) or bending (bowing), cracking (cracking), peeling (peeling) or holes in the inner film layer of the overall semiconductor structure, thus destroying It affects the interconnection structure including these film layers and affects the reliability of the integrated circuit device formed by it.

Based on the above reasons, low dielectric constant dielectric materials are more difficult to integrate into existing integrated circuit structures and manufacturing processes than traditional silicon dioxide materials. Therefore, when integrated circuit devices and their manufacturing processes use low dielectric constant to replace traditional The above problems may occur when the silica material

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