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Base with ring-body and producing method

A manufacturing method and technology of the ring body, applied in the direction of electric solid state devices, semiconductor devices, semiconductor/solid state device components, etc., can solve the problems of cumbersome application, inability to provide comprehensive and complete solutions, and unstable product yield.

Inactive Publication Date: 2007-01-10
周志邦
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, this manufacturing method is notorious for its long manufacturing time and high failure rate due to the glass powder sintering method. In addition, because the manufacturing method only uses the direct liquid droplet formation method of the transparent colloid on the substrate. Produces light-transmitting colloid layers with different shapes, resulting in extremely unstable product yields
[0004] In the prior art, relative to the manufacturing method of light-emitting diode substrates, expensive and complex machines are used, cumbersome chemical processes are used, or glass frit sintering is combined with direct droplets of light-transmitting colloid, which may not be able to provide comprehensive and complete solutions for today’s high-yield and fast-production manufacturing requirements. solution

Method used

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  • Base with ring-body and producing method
  • Base with ring-body and producing method
  • Base with ring-body and producing method

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Embodiment Construction

[0045] see figure 1 and figure 2 , figure 1 It is a three-dimensional exploded view of a preferred embodiment of the present invention, figure 2 It is a perspective view of a preferred embodiment of the present invention. The present invention provides a base with rings, which includes: a substrate 100 with an insulating layer 110 and a circuit layer 120; a ring 200 disposed on the surface of the substrate 100; a light emitting diode chip (LED, Light Emitting Diode) 300 is arranged on the surface of the substrate 100 surrounded by the ring body 200, and has an electrical connection relationship with the circuit layer 120 on the substrate 100, and the height of the ring body 200 on the substrate 100 is greater than the The height of the LED 300 above the substrate 100 ; and a light-transmitting colloid layer 400 made of light-transmitting material for covering the LED chip 300 and preventing the LED chip 300 from being in direct contact with the outside world.

[0046] se...

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Abstract

The base seat with ring body is composed of following arts: a base plate possesses at least an insulating layer and a circuit layer; a ring body setup on surface of the base plate; being setup on surface of the base plate circled by the ring body, a chip of light emitting diode (LED) is connected to the circuit layer on the base plate electrically, height of the ring body on the base plate is larger than height of the LED on the base plate; being prepared from euphotic material, an euphotic colloid layer is in use for covering the chip of LED so as to prevent the chip of LED from contacting outside directly.

Description

technical field [0001] The invention relates to a light-emitting diode base and a manufacturing method thereof, in particular, it utilizes the tight combination of the ring body and the substrate to prevent the generation of light-transmitting colloid layers with different shapes. Background technique [0002] The manufacturing method applied to the LED base in the prior art includes: forming a groove and a conductive circuit on a substrate through multiple processes, and forming a light emitting diode in the center of the groove, such as TW Patent Publication No. 508841 Disclosed is a method for manufacturing a nitride semiconductor substrate, comprising the following steps: forming a protective film with windows in the form of stripes, grids, or islands on a supporting substrate; growing laterally on the film, and stopping the growth in a state where the protective film is not covered; removing the protective film, thereby forming holes under the laterally grown first nitr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L23/02H01L23/12H01L33/48H01L33/54
Inventor 周志邦
Owner 周志邦
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