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CMOS image sensor

An image sensor and equipment technology, applied in the field of CMOS image sensors, can solve the problems of CMOS image sensor operation performance degradation, difficulty in effectively preventing PD potential, reset transistor leakage, etc.

Inactive Publication Date: 2007-04-18
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the active area of ​​the reset transistor is rectangular, it is difficult to effectively block the potential of the PD when the reset transistor is turned off
In addition, the potential of the PD cannot be effectively transferred to the drive transistor, but will leak when the reset transistor is turned off
Therefore, the operational performance of the CMOS image sensor is degraded due to the rectangular active area of ​​the reset transistor

Method used

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Embodiment Construction

[0040] The technical features of the CMOS image sensor according to the embodiments of the present invention are applicable to 3T, 4T and 5T type CMOS image sensors. 5-9 illustrate examples of 3T and 4T type CMOS image sensors according to embodiments of the present invention.

[0041] FIG. 5 shows an example layout diagram of a pixel of a CMOS image sensor according to an embodiment of the present invention. 6 and 7 are examples of enlarged views illustrating the active region 100 according to an embodiment of the present invention.

[0042] As shown in FIG. 5 , according to an embodiment of the present invention, a CMOS image sensor may include an active region 100 . A photodiode (PD) 101 may be formed at one side of the active region 100 . The gates 110 , 120 and 130 of the three transistors may overlap the active region 100 . The active region 100 may be formed in the semiconductor substrate by shallow trench isolation (STI) processing, as is well known to those skilled...

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Abstract

A CMOS image sensor includes a semiconductor substrate with an active area. A photodiode and a plurality of transistors may be formed on the active area. The active area has a portion with a variable width below a reset transistor.

Description

technical field [0001] The present invention relates to a CMOS image sensor having an active region below the transistor. Background technique [0002] Generally, a Complementary Metal Oxide Semiconductor (CMOS) image sensor may adopt a switching mode to continuously detect an output of each unit pixel using a MOS transistor. MOS transistors may be formed on a semiconductor substrate, where each group of transistors corresponds to each unit pixel. CMOS technology can use peripherals (eg, controllers and signal processors) in operation. [0003] CMOS image sensors can be classified into 3T, 4T, and 5T type CMOS image sensors according to the number of transistors. A 3T type CMOS image sensor may include one photodiode and three transistors. A 4T type CMOS image sensor may include one photodiode and four transistors. [0004] Figure 1 is an example of a circuit diagram of a 3T type CMOS image sensor. FIG. 2 is an example of a layout diagram showing a 3T type CMOS image se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14643
Inventor 全寅均
Owner DONGBU ELECTRONICS CO LTD