Half module substrate integrated wave guide ring electric bridge

A half-mode substrate integrated and annular technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve the problems of unsatisfactory size of annular bridges, large radiation loss, and difficult processing, and achieve easy large-scale The effect of production, small size and low processing difficulty

Inactive Publication Date: 2007-04-18
SOUTHEAST UNIV
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Problems solved by technology

Although the former has better performance, it is difficult to process and high in cost; the latter has a large radiation loss under high frequency conditions.
Although the ring bridge designed with the help of the newly emerging substrate-integrated waveguide (SIW) technology in recent years reduces the radiation loss, since the substrate-integrated waveguide (SIW) itself is a waveguide structure, considering the cut-off characteristics of the waveguide itself, Its width must meet certain requirements, so the designed substrate integrated waveguide (SIW) ring bridge is not satisfactory in size

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  • Half module substrate integrated wave guide ring electric bridge

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Embodiment Construction

[0013] The invention relates to a half-mode substrate integrated waveguide annular bridge for millimeter wave and microwave devices. The annular bridge is composed of a front metal patch and a back metal patch on both sides of a dielectric substrate 1. The front of 1 is provided with an annular half-mode substrate integrated waveguide 4 composed of a front metal patch, and the first port 41, the second port 42, the third port 43, and the fourth port 44 are connected in parallel on the annular half-mode substrate integrated waveguide 4. On the waveguide 4, the entire ring is divided into four sections, and a metallized through hole 3 is provided through the dielectric substrate 1 between the front metal patch and the back metal patch. The total length of the annular half-mode substrate integrated waveguide 4 is 1.5+2*n times the waveguide wavelength corresponding to the working frequency, where n is a non-negative integer. The inner side of the integrated waveguide of the ring-...

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Abstract

The invention is a half-mode substrate integrated waveguide (HMSIW) annular bridge, relating to a millimeter wave and microwave device, especially relating to a HMSIW annular bridge, composed of metal patches arranged on the right and reverse sides of a medium substrate, where the right side of the medium substrate is equipped with an annular HMSIW composed of metal patch, and first port, second port, third port, and fourth port connected in parallel with the annular HMSIW to divide the whole ring into four segments, and a metallized through hole runs through the medium substrate between the two metal patches. The overall length of the annular HMSIW is 1.5+2*n times as large as the corresponding waveguide wavelength to operating frequency, where n is a non-negative integer. And the annular bridge has characters of small size, low loss, low cost, easy integration, and good performance.

Description

technical field [0001] The invention relates to a millimeter wave and microwave device, in particular to a half-mode substrate integrated waveguide (HMSIW) ring bridge. Background technique [0002] In the existing millimeter-wave and microwave passive devices, there are usually two forms of bridge structures that can achieve 180-degree phase difference output: E-plane waveguide form and microstrip line ring bridge form. Although the former has better performance, it is difficult to process and high in cost; the latter has a large radiation loss under high frequency conditions. Although the ring bridge designed with the help of the newly emerging substrate-integrated waveguide (SIW) technology in recent years reduces the radiation loss, since the substrate-integrated waveguide (SIW) itself is a waveguide structure, considering the cut-off characteristics of the waveguide itself, Its width must meet certain requirements, so the designed substrate-integrated waveguide (SIW) r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/12
Inventor 洪伟刘冰张彦
Owner SOUTHEAST UNIV
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