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Nitride semiconductor light-emitting diode

A technology of nitride semiconductors and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as increased driving voltage

Inactive Publication Date: 2007-04-25
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, when the size of the rectangular LED chip decreases, the driving voltage increases

Method used

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  • Nitride semiconductor light-emitting diode
  • Nitride semiconductor light-emitting diode

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Embodiment Construction

[0025] Reference will now be made in detail to specific embodiments of the present general inventive concept and examples illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. The specific embodiments are described below in order to explain the general inventive concept of the present invention by referring to the figures.

[0026] Hereinafter, a nitride-based semiconductor LED according to specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0027] Referring to FIGS. 2 to 4 , the structure of the nitride-based semiconductor LED will be described in detail.

[0028] 2 is a plan view showing the structure of a nitride-based semiconductor LED according to a specific embodiment of the present invention, FIG. 3 is a cross-sectional view along line III-III' of FIG. 2 , and FIG. Photo of the nitride-based semiconductor LED emitting light shown.

[0029] 2 and ...

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Abstract

A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2005-97412 filed with the Korean Intellectual Property Office on October 17, 2005, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a nitride-based semiconductor light emitting diode (LED) capable of achieving a low driving voltage in an LED chip having the same cell area. Background technique [0004] Since nitride-based semiconductors such as GaN have excellent physical and chemical properties, they are used as basic materials of light emitting diodes such as light emitting diodes (LEDs) or laser diodes. Like nitride-based semiconductors, have the structural formula In X Al Y Ga 1-X-Y Materials of N(0≤X, 0≤Y, X+Y≤1) are widely used. [0005] Typically, nitride-based semiconductor LEDs are composed of square LED chips to improve current spreading efficiency. However, rece...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32H01L33/38H01L33/42
CPCH01L33/32H01L33/20H01L33/38
Inventor 李赫民片仁俊朴炫柱金显炅金东俊申贤秀
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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