Supercharge Your Innovation With Domain-Expert AI Agents!

Wafer fuse and its making method

A fuse and chip technology, which is applied in the manufacture of fuses, semiconductor/solid-state devices, emergency protection devices, etc., can solve the problems of increasing production costs, easy to pollute the environment, and cumbersome manufacturing processes, and achieve the effect of increasing production costs

Inactive Publication Date: 2007-05-23
INPAQ TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, although this patent can manufacture fuses on microchips to achieve the purpose of miniaturization, the metal film is etched to form fuses, so the manufacturing process is cumbersome, increasing the production cost, and using a large amount of chemicals, which is easy to pollute the environment, which is very harmful. convenient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer fuse and its making method
  • Wafer fuse and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Regarding the screw of the present invention, the technical means adopted and the effect of achieving the above-mentioned purpose are easy to understand. Hereby, a detailed description is made with the best embodiment in conjunction with the simple description of the drawings and the symbols of each component as follows:

[0016] The present invention relates to a chip fuse and its manufacturing method, please refer to Figures 1 and 2, wherein the chip fuse includes:

[0017] Wafer substrate 11, forming terminal electrodes 111 on its two end faces;

[0018] The first matrix 12 is made by coating a layer of heat insulating material between the two terminal electrodes 111;

[0019] The second substrate 13 is made by printing an organic metal material on the surface of the first substrate 12 by a thick film printing method, and has two end parts 131 and a middle part 133, so that the two end parts 131 and the two ends The electrodes 111 are electrically connected;

[002...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a crystal fuse and relative production, wherein it forms end electrodes at two ends of non-conductive crystal base board; covers insulated material between two end electrodes, to form one first substrate; using film printing method to print organic metal material on the first substrate, to connect two ends of metal material with two end electrodes, to form the second substrate; the covers one insulated material on the second substrate, to form the third substrate; therefore, the first, second, and third substrates can form the micro fuse of crystal sheet.

Description

technical field [0001] The invention relates to a chip fuse and a manufacturing method thereof, in particular to a method for manufacturing a miniature fuse on a chip with an organic metal material. Background technique [0002] According to, the general existing microchip fuse, such as China Taiwan Invention Patent No. 83108278 microchip fuse and its manufacturing method, it discloses: a fusible element made of a metal film; perforated through the first substrate and set, and fill with photoresist to make the surface of the first substrate smooth; then after the resist is fixed, metal is formed on the surface of the first substrate to form a metal film; the photoresist is coated on the metal film, and the photomask is placed on the resist on the body to complete the exposure and development; the metal film is etched and the resist is removed to form a fusible element made of the metal film extending through the perforation; the second substrate is placed under the first sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01H85/00H01H69/02H01L23/62H01L21/00
Inventor 黄月碧吴明怡廖世昌
Owner INPAQ TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com