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Monocrystals of nitride containing gallium and its application

A nitride and single crystal technology, applied in gallium/indium/thallium compounds, single crystal growth, single crystal growth, etc., can solve the problems of high cost, regardless of multiple ELOG structures and optional deposition, and achieve excellent crystallization performance Effect

Inactive Publication Date: 2007-05-30
AMMONO SP Z O O (PL)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It must be noted here that the multiple and optional deposition of the ELOG structure on the crystalline seed is not considered mainly because of the high cost

Method used

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  • Monocrystals of nitride containing gallium and its application
  • Monocrystals of nitride containing gallium and its application
  • Monocrystals of nitride containing gallium and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0122] Embodiment 1 (flux method)

[0123] Place the mixture of gallium and lithium in the high temperature reactor (Figure 1) in the molybdenum crucible (A), the crucible volume is 250cm 3 . An additional flux selected from Bi, In, K, Na, Pb, Rb, Sb, Sn and Te was also added to the system so that the molar ratio of X:Ga:Li was 0.5:1.0:1.5- 1.5:1.0:2.5. The mixture was heated to about 780°C in an argon (Ar) atmosphere, resulting in an alloy of the aforementioned metals having the given X:Ga:Li molar ratio. After one day, the atmosphere was changed to nitrogen (N2) at a pressure of 2.3 MPa. The pressure and temperature conditions in the reactor were then maintained for several days. Subsequently, the growth process of the single crystal gallium-containing nitride on the seed crystal (B) is started, the seed crystal (B) is in the form of a single crystal wafer oriented substantially perpendicular to the c-axis of the crystal and has a thickness of 0.24-4 cm 2 The cross-sect...

Embodiment 2

[0124] Embodiment 2 (diffusion flux method)

[0125] Place the mixture of gallium and lithium in the high temperature reactor (Figure 1) in the molybdenum crucible (A), the crucible volume is 250cm 3 . An additional flux selected from Bi, In, K, Na, Pb, Rb, Sb, Sn and Te was also added to the system so that the molar ratio of X:Ga:Li was 0.5:1.0:1.5- 1.5:1.0:2.5. The mixture was heated to an average temperature of about 780° C. in an argon (Ar) atmosphere, where the temperature of the upper part of the crucible was tens of degrees Celsius lower than the average temperature, while the temperature of the lower part of the crucible was tens of degrees Celsius higher than the average temperature. As a result, an alloy of the aforementioned metals having the given X:Ga:Li molar ratio was obtained. After one day, the temperature gradient in the crucible was reversed and the atmosphere was changed to nitrogen (N 2 ). The pressure and temperature conditions in the reactor were th...

Embodiment 3

[0126] Embodiment 3 (convective flux method)

[0127] Place the mixture of gallium and lithium in the high temperature reactor (Figure 1) in the molybdenum crucible (A), the crucible volume is 250cm 3 . An additional flux selected from Bi, In, K, Na, Pb, Rb, Sb, Sn and Te was also added to the system so that the molar ratio of X:Ga:Li was 0.5:1.0:1.5- 1.5:1.0:2.5. In addition, the raw material (C) was placed at the bottom of the crucible. The mixture was heated in an argon (Ar) atmosphere until an average temperature of about 780°C was reached, with the temperature of the upper part of the crucible being several tens of degrees Celsius lower than the average temperature, while the temperature of the lower part of the crucible being several tens of degrees Celsius higher than the average temperature. As a result, an alloy of the aforementioned metals having the given X:Ga:Li molar ratio was obtained. After one day, change the atmosphere to nitrogen (N 2 ). The pressure an...

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Abstract

Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 10<4> / cm<2> and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15m, more preferably longer than 30m, and most preferably of about 70m, considerably longer than the curvature radius of the crystalline lattice of the seed.

Description

technical field [0001] The subject of the invention is bulk monocrystalline gallium-containing nitrides used as epitaxial substrates in the process of obtaining nitride semiconductor structures, and a method for preparing bulk monocrystalline gallium-containing nitrides by using the flux method and the ammonia method. [0002] Nitrides containing group XIII elements (IUPAC, 1989) are valuable materials for the optoelectronic industry. [0003] Bulk single-crystal Ga-containing nitride is considered to be the best substrate for deposition of GaN epitaxial layers, whose energy gap can be used to produce laser diodes (LDs) and blue light-emitting diodes (LEDs). However, the conditions that must be met to make it usable as an epitaxial substrate are its high crystalline quality and the low dislocation density of a single crystal. [0004] Bulk single-crystal gallium-containing nitrides obtained by existing methods have not met these requirements. However, the desired need for ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B9/00C30B29/00C01B21/06C01G15/00
Inventor 罗伯特·德维林斯基罗曼·多拉津斯基耶日·加尔钦斯基莱谢克·西尔兹普托夫斯基神原康雄罗伯特·库哈尔斯基
Owner AMMONO SP Z O O (PL)
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