DMOS transistor with optimized periphery structure

Abstract

A lateral DMOS transistor is disclosed in the invention that includes a first region of a first conductivity type, which is surrounded on the sides by a second region of a second conductivity type, whereby a boundary line between both regions has opposite straight sections and curved sections linking the straight sections, and with a first dielectric structure, which serves as a field region and is embedded in the first region and surrounds a subregion of the first region. Whereby the first distance between the first dielectric structure and the boundary line is greater along the straight sections than along the curved sections.

Description

technical field [0001] The invention relates to a lateral DMOS transistor having a first region of a first conductivity type which is laterally surrounded by a second region of a second conductivity type, wherein a boundary line between the two regions has Straight sections facing each other and at least partially curved sections connecting the straight sections, the DMOS transistor also has a first dielectric structure serving as a field region embedded in the A partial area in and around the first area. Background technique [0002] A DMOS transistor is understood to be a field-effect transistor having a source region, a channel region and a drain region, wherein the drain region is separated from the channel region by a drift region. The conductivity of the channel region is controlled by the gate voltage, which controls the occurrence and intensity of the inversion (Inversion) of the positive or negative carrier concentration under the gate, while the current in the dri...

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Problems solved by technology

This effect cannot be exploited optimally not only for too low a doping of the drift region but also for its too high doping

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