Semiconductor laser device

Abstract

A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 105137637, filed on Nov. 17, 2016. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The invention relates to a semiconductor light emitting device. More particularly, the invention relates to a semiconductor laser device.2. Description of Related Art[0003]With the progress of semiconductor technologies, the launch of semiconductor laser technologies has significantly changed people's lives. Laser diodes (LD) characterized by high energy efficient, small volume, and light weight have been applied in various fields including fiber-optic communication, optical discs, laser printers, laser scanners, laser indicators, etc. In general, the semiconductor laser may be categorized into an edge emitting laser (EEL) and a vertical ...

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor laser device that has small optical loss and efficient light emission without compromising electrical and optical performance. This is achieved by a semiconductor epitaxial structure that includes a ridged structure on one side of a first semiconductor layer, a transparent conductive layer, and an electrode pad layer. The electrode pad layer has an empty area that does not absorb significant light emitted from the light emitting layer. The transparent conductive layer may also disperse electrical current supplied from the outside, resulting in even distribution of current and small optical loss.

Problems solved by technology

However, when the light coming from the light emitting layer passes through the electrode pads, a portion of the light is absorbed by the electrode pads made of metal materials, which may lead to certain optical loss of the semiconductor laser device.

Hence, it is not easy for the semiconductor laser device to take both the electrical performance and the optical performance into consideration, and thus the light emitting efficiency of the semiconductor laser device cannot be easily improved.

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