Neural network for determining the endpoint in a process
a neural network and process technology, applied in semiconductor/solid-state device testing/measurement, testing/monitoring control systems, instruments, etc., can solve problems such as difficult to determine the exact endpoint of an etching process, excessive etching of underlying materials, undesirable change of etching shap
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[0001] 1. Field of the Invention
[0002] This invention relates to endpoint detection in a semiconductor process utilizing a neural network.
[0003] 2. Background of the Invention
[0004] Today in semiconductor processing, different structures, such as trenches and vias in semiconductor devices are formed by etching processes. FIGS. 1A-1C illustrate the steps in a known process for etching a semiconductor device. As shown in FIG. 1A, a semiconductor device 100 comprises a silicon substrate 102, a polysilicon layer 104, and an insulating layer 106. On insulating layer 106 is deposited a photoresist layer 108. Photoresist layer 108 is patterned into a predetermined structure. The predetermined structure may be, for example, a via hole or trench. Photoresist layer 108 serves as a mask for the etching process.
[0005] Then, as shown in FIG. 1B, photoresist layer 108 functions as a mask during the etch process. In the etching process, insulating layer 106 is etched until polysilicon layer 104 is...
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