Metal film semiconductor device and a method for forming the same

Abstract

A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.

Description

[0001] This application is a continuation of, and claims domestic priority benefits under 35 U.S.C. §120 to, co-pending U.S. patent application Ser. No. 10 / 367,916 to Jong-Myeong LEE et al., filed Feb. 19, 2003 and claims the priority of Korean Patent Application No. 2002-55970, filed Sep. 14, 2002, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention generally relates to a method for forming a metal film of a semiconductor device, and more particularly, to a method for forming a metal film on a substrate, which includes a recess such as a contact hole or a via hole. [0004] 2. Description of the Related Art [0005] The rapid development of information process apparatuses has necessitated the development of semiconductor devices having high operational speed and large storage capacity. Such semiconductor devices have a high integration dens...

AI Technical Summary

Benefits of technology

[0017] An exemplary embodiment of the present invention provides a method of forming a semiconductor device, including forming a metal barrier layer in a recess of a substrate, forming an insulation film on a portion of the substrate but not in the recess, forming a metal film on a portion of the metal barrier layer in the recess, and forming another metal film on the substrate.

[0005] The rapid development of information process apparatuses has necessitated the development of semiconductor devices having high operational speed and large storage capacity. Such semiconductor devices have a high integration density, improved reliability, and rapid response speed. These are only several examples of the advantageous attributes attributed to such advanced semiconductor devices.

Problems solved by technology

However, because the aluminum film is rapidly deposited at the entrance of the recess, which has a high aspect ratio, the recess entrance may be blocked.

Moreover, the aluminum forming method may create undesirable voids in the recess.

However, the method need not be used for filling a contact hole that includes a conductive film, such as a metal barrier layer.

This additional oxidation process required for forming the ANL reduces the productivity of the recess filling process.

However, forming the ANL is less effective without the use of plasma.

Furthermore, the use chemical vapor deposition generally does not fill the recess with aluminum film.

As a result, processing failures may occur even though the productivity may be improved.

Images