Thin films and production methods thereof

Abstract

A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a second substrate.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field Of The Invention [0002] The present invention relates to thin films and production methods thereof, and more particularly to thin films (e.g., semiconductors) capable having one or more structures (e.g., microelectronics) formed thereon or therein. [0003] 2. Description Of The Prior Art [0004] Thin film materials such as semiconductors are the backbone of many of today's miniaturized products. These everyday devices are, for example, based on integrated circuits, photovoltaics, or the like. Improvements in these products are constantly being sought, typically to enhance performance and reliability, as well as to reduce material and labor costs associated with manufacture thereof. [0005] A primary objective in processing of many semiconductors and other thin film devices is to form thin films with very small dimensions (e.g., on the order of microns). Thin devices may be useful for structural objectives, such as smaller and more lightweight...

AI Technical Summary

Benefits of technology

This approach minimizes material wastage and damage to semiconductor devices, allowing for efficient processing and reuse of the support layer, while maintaining the integrity of the structures formed on the thin film, and enabling the use of harsh processing conditions without subsequent repair.

Problems solved by technology

Further, since most materials used to form thin film substrates (e.g., semiconductors) are relatively expensive, minimization of wasted material is desirable.

However, many conventional thin film substrates processing methods waste material, as described below.

However, formation of a uniform film is difficult with this technique.

Further, layer growth is extremely cumbersome when the substrate materials are different.

These mechanical methods, such as cutting or grinding, waste a tremendous amount of material and labor.

The cut or ground material often may not be recycled, or, even if it is recyclable, the material must undergo further processing before reuse.

All of these techniques result in wasted time and material, as well presenting quality control concerns.

The microelectronics, however, must be formed subsequent to delaminating the thin layer, since ion implantation detrimentally affects the microelectronics.

Particularly, the thin layer may be warped, the devices may be damaged by the ion implantation, or the device may be damaged during delamination.

While it may be possible to realize thin films having transistors thereon using the teachings of WO 98 / 33209, the transistors are subjected to undesirable stress in the cleavage propagation, since the crystalline structure of the substrate material must be fractured in the immediate vicinity of the transistor.

This may compromise overall mechanical integrity of the intermediate structure and any semiconductor devices formed on the porous semiconductor material.

It is noted that processing to form the stressed layer may damage devices formed thereon, thus subsequent repair annealing is typically required.

Therefore, conventional ion implantation and delamination methods are lacking in that a thin film including microelectronics or other structures thereon may not be ion implanted without warping or other damage to the thin semiconductor.

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