Method and apparatus for deposition & formation of metal silicides
a metal silicide and metal technology, applied in the field of silicide formation, can solve the problems of oxygen and other ambient materials having a detrimental effect on the metal used, and achieve the effect of reducing the amount of oxygen in the metal used
Inactive Publication Date: 2005-03-31
IBM CORP
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Benefits of technology
The invention provides methods and structures for forming silicide on silicon materials. The process involves placing the silicon material in a vacuum environment, depositing metal on the silicon material, and heating the silicon surface while maintaining the vacuum. The heating process can form a monosilicide or a disilicide depending on the temperature range. The system includes a vacuum chamber, metal formation tool, and heating tool. The invention allows for the simultaneous formation of metal and heating of the silicon surface without breaking the vacuum environment. The process can also include etching of unreacted metal and heating the silicon material afterward. The vacuum chamber can have multiple connected vacuum chambers to maintain the silicon material in a continuous vacuum environment. The technical effects of the invention include improved efficiency and purity of silicide formation.
Problems solved by technology
However, this allows ambient materials, such as oxygen, to have a detrimental effect upon the metal that is used in the silicide process.
Method used
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[0017] The present invention and the various features and advantageous details thereof are explained more fully with reference to the non-limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description. It should be noted that the features illustrated in the drawings are not necessarily drawn to scale. Descriptions of well-known components and processing techniques are omitted so as to not unnecessarily obscure the present invention in detail.
[0018] As shown in the flowchart in FIG. 1, the invention provides a method for forming a silicide on a silicon material. More specifically, in item 100, the invention places the silicon material in a vacuum environment. Then, in item 102, the invention forms (e.g., deposits) metal on the silicon material without breaking vacuum. Next, in item 104, the invention heats the silicon surface and the metal without breaking the vacuum environment.
[0019] After the foregoing processing, the invention r...
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Abstract
Disclosed is a method and structure for forming a silicide on a silicon material. The invention places the silicon material in a vacuum environment, forms metal on the silicon material, and then heats the silicon surface and the metal without breaking the vacuum environment. The processes of forming the metal and heating the silicon can be performed simultaneously without breaking the vacuum environment to form the silicide as the metal is being deposited. After the foregoing processing, the invention can remove the silicon surface from the vacuum environment and perform additional heating of the silicon surface. The first heating process forms a monosilicide and the additional heating forms a disilicide.
Description
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention generally relates to silicide formation and more particularly to an improved method and system that deposit metal and heats the silicon and metal without breaking vacuum. [0003] 2. Description of the Related Art [0004] A silicide is often formed on silicon surfaces to decrease resistivity of the silicon. More specifically, a metal is deposited on the silicon surface and the structure is heated. This produces a silicide on the silicon surface. Conventional systems first form the metal and then move the structure to a heating tool to perform the heating process. However, this allows ambient materials, such as oxygen, to have a detrimental effect upon the metal that is used in the silicide process. Therefore, conventional systems often form a protective layer over the silicide metal. This protective layer must eventually be removed. [0005] The invention described below eliminates the need for this...
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IPC IPC(8): C22F1/00C23C14/16C23C14/58
CPCC23C14/5806C23C14/16
Inventor GIEWONT, KENNETH JOHNJONES, BRADLEY PAULLAVOIE, CHRISTIANPURTELL, ROBERT J.WANG, YUN-YUWONG, KWONG HON
Owner IBM CORP