Nanosubstrate with conductive zone and method for its selective preparation
a technology of conductive zone and nanosubstrate, which is applied in the direction of nanoinformatics, polycrystalline material growth, transportation and packaging, etc., can solve the problems of inability to find the method for manufacturing nanostructures and other problems to da
Inactive Publication Date: 2005-08-04
YISSUM RES DEV CO OF THE HEBREWUNIVERSITY OF JERUSALEM LTD
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Benefits of technology
The present invention provides new nanostructures with selective, well-defined anchor points (conductive zones) that can be used for self-assembly in solution and onto substrates. These nanostructures have elongated shapes such as rods, wires, tubes, or in branched form. The nanostructures can be made of semiconductor materials, insulating materials, metallic materials, or mixtures thereof. The invention also provides a method for forming the conductive zones on the nanostructures. These nanostructures can serve as templates for the deposition of a conducting material and can be used for self-assembly in solution or onto substrates.
Problems solved by technology
Such nanostructures and method for their manufacture are not available to date.
Method used
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[0054] The method is exemplified hereinbelow with reference to selective growth of metal tips onto semiconductor nanorods and tetrapods.
[0055] In a method for selective growth of contacts made of gold, AuCl3 was dissolved in toluene by use of dodecyldimethylamonium bromide (DDAB) and dodecylamine, and the resulting solution was added to a toluene solution comprising of colloidal grown nanorods or tetrapods. The method is exemplified for the prototypical CdSe nanocrystal system that is highly developed synthetically and widely studied for its size and shape dependent properties.
[0056] CdSe rods and tetrapods of different dimensions (see below), were prepared by high temperature pyrolisys of suitable precursors, in a coordinating solvent containing a mixture of trioctylphosphineoxide (TOPO), and of phosphonic acids [9]. In a typical Au growth reaction, a gold solution was prepared containing 12 mg AuCl3 (0.04 mmol), 40 mg of DDAB (0.08 mmol) and 70 mg (0.37 mmol) of dodecylamine in ...
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Abstract
The present invention provides novel nanostructure composed of at least one elongated structure element, an elongated structure element of said nanostructure bearing an electrically conductive zone selectively grown onto the elongated structure element. The present invention further provides a selective method for forming in a liquid medium, such nanostructures.
Description
FIELD OF THE INVENTION [0001] This invention relates to the field of treatment of semiconductor nanostructures. LIST OF REFERENCES [0002] The following references are considered to be pertinent for the purpose of understanding the background of the present invention: [0003] 1. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. Smith, and C. M. Lieber, Nature 415, 617 (2002). [0004] 2. Y. Wu, R. Fan, P. Yang, Nano Lett. 2, 83 (2002). [0005] 3. D. V. Talapin, R. Koeppe, S. Goltzinger, A. Komowski, J. M. Lupton, A. L. Rogach, 0. Benson, J. Feldmann, and H. Weller, Nano Lett. 3, 1677 (2003). [0006] 4. WO 03 / 097904 [0007] 5. WO 03 / 054953 [0008] 6. Y. Cui and C. M. Lieber, Science 291, 851 (2001). [0009] 7. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002). [0010] 8. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, Nature 424, 654 (2003). [0011] 9. Z. A. Peng, X.Peng, J. Am. Chem. Soc. 123, 1389 (2001). [0012] 10. J. E.Cretier and ...
Claims
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IPC IPC(8): B05D5/12B82B3/00C30B7/14C30B29/60H01L21/768H01L29/06
CPCB82Y10/00B82Y30/00C30B29/605H01L29/0665Y10T428/24917H01L29/0673H01L2924/0002H01L29/0669H01L2924/00
Inventor BANIN, URIMOKARI, TALEB
Owner YISSUM RES DEV CO OF THE HEBREWUNIVERSITY OF JERUSALEM LTD