Thin film forming apparatus and thin film forming method

Abstract

Prior to the start of transfer of an insulation film to a substrate, the degree of opening of a butterfly valve is set small so that evaporation of a solvent component contained in the insulation film is suppressed and the fluidity of the insulation film is ensured at the start of the transfer. On the other hand, the butterfly valve is totally opened at the start of the transfer, so that the pressure inside a thin film forming chamber rapidly decreases and transfer of the insulation film to the substrate is performed always in a low-pressure state (high-degree of vacuum).

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a thin film forming apparatus and a thin film forming method, which require to press a substrate and a sheet film against each other within a thin film forming chamber so that a thin film, such as an insulation film, disposed on the sheet film in advance is transferred onto the substrate and a thin film is accordingly disposed on the substrate. [0003] 2. Description of the Related Art [0004] Over the recent years, it has became necessary to use a thin film forming method suitably applicable to a large area size as wafers for the manufacture of LSIs have became larger in diameter, liquid crystal panels have became larger in area size, etc. In addition, in the field of multilevel interconnections techniques for manufacturing LSIs, as the surface of an insulation film needs be planarized accurately to realize multilevel interconnections. It is not only necessary to handle an increase in...

AI Technical Summary

Benefits of technology

The present invention provides a thin film forming apparatus and method that can effectively transfer a thin film onto a substrate. The pressure inside the chamber is controlled to proper levels before and during transfer to ensure optimal transfer. The technical effect is the improved transfer of thin films onto substrates.

Problems solved by technology

The fluidity of the thin film therefore would have deteriorated by the time the transfer starts, thereby making it impossible to favorably transfer the thin film to the substrate in some cases.

Conversely, but for sufficient depressurization of the thin film forming chamber during transfer, the transfer of the thin film to the substrate could leave a void between a pattern formed in the substrate, such as a contact hole, and the thin film, in which case excellent transfer becomes impossible.

Despite this, such pressure control is difficult in the conventional apparatus.

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