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Method for fabricating a monolithic fluid injection device

a monolithic fluid and injection device technology, applied in piezoelectric/electrostrictive transducers, instruments, record information storage, etc., can solve the problems of increased production costs and defects, and achieve the effect of reducing process costs and improving yield

Inactive Publication Date: 2006-10-26
BENQ CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for fabricating a monolithic fluid injection device using a hybrid integrated process that merges parts of the back-end MEMS and front-end IC processes. This reduces process cost and improves yield. The method involves forming a patterned sacrificial layer on a substrate, patterning a structure layer to cover the sacrificial layer, and etching the structure layer to form an orifice connecting a fluid chamber. A protective layer is then formed over the substrate to cover the structure layer and the conductive layer. The substrate is then etched to form the fluid channel. The invention provides a simpler and more efficient method for fabricating the orifice of a monolithic fluid injection device.

Problems solved by technology

Production costs and the probability of defects, however, increase with repeated thin-film processes.

Method used

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  • Method for fabricating a monolithic fluid injection device
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  • Method for fabricating a monolithic fluid injection device

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first embodiment

[0024]FIGS. 2A to 2F are cross-sections illustrating the manufacture of a monolithic fluid injection device according to the first embodiment of the invention, wherein FIGS. 2A to 2D show the front-end IC process and FIGS. 2E to 2F show the back-end MEMS process. Referring to FIG. 2A, a patterned sacrificial layer 120 is formed on a substrate 100 (e.g. a silicon wafer) having a first surface and a second surface. The sacrificial layer 120 comprises borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), or silicon oxide. The sacrificial layer 120 may be deposited using a CVD or LPCVD process. In a typical processing sequence, a structure layer 130 is conformally formed on the first surface of the substrate 100 and covers the patterned sacrificial layer 120. The structure layer 130 comprises silicon oxide. The structure layer 130 may be deposited using a CVD or a LPCVD process. A patterned resistive layer 140 is formed on the structure layer 130 as a heater. The resistive laye...

second embodiment

[0030]FIGS. 3A to 3C are cross-sections illustrating the manufacture of a monolithic fluid injection device according to the second embodiment of the invention, wherein FIG. 3A shows the front-end IC process and FIGS. 3B and 2C show the back-end MEMS process. Referring to FIG. 3A, a patterned sacrificial layer 120 is formed on a substrate 100 (e.g. a silicon wafer) having a first surface and a second surface. The sacrificial layer 120 comprises borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), or silicon oxide. The sacrificial layer 120 may be deposited using a CVD or LPCVD process. In a typical processing sequence, a structure layer 130 is conformally formed on the first surface of the substrate 100 and covers the patterned sacrificial layer 120. The structure layer 130 comprises silicon oxide. The structure layer 130 may be deposited using a CVD or LPCVD process. A patterned resistive layer 140 is formed on the structure layer 130 as a heater. The resistive layer 140 ...

third embodiment

[0034]FIGS. 4A to 4C are cross-sections illustrating the manufacture of a monolithic fluid injection device according to the third embodiment of the invention, wherein FIG. 4A shows the front-end IC process and FIGS. 4B and 4C show the back-end MEMS process. Referring to FIG. 2A, a patterned sacrificial layer 120 is formed on a substrate 100 (e.g. a silicon wafer) having a first surface and a second surface. The sacrificial layer 120 comprises borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), or silicon oxide. The sacrificial layer 120 may be deposited using a CVD or LPCVD process. In a typical processing sequence, a structure layer 130 is conformally formed on the first surface of the substrate 100 and covers the patterned sacrificial layer 120. The structure layer 130 comprises a silicon nitride. The structure layer 130 may be deposited using a CVD or LPCVD process. A patterned resistive layer 140 is formed on the structure layer 130 as a heater. The resistive layer 1...

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Abstract

A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to thermal ink-jet (TIJ) technology, and more particularly, to a method for fabricating a monolithic fluid injection device. [0003] 2. Description of the Related Art [0004] The conventional fabrication technique of a monolithic fluid injection device typically includes standard integrated circuit (IC) technology and micro-electro-mechanical system (MEMS) technology for both front-end and back-end processes. The front-end process comprises formation of wafer driving circuits and heating elements in an IC foundry. The subsequent back-end process forms fluid chambers and orifices on said wafer in a MEMS foundry. [0005] Both the IC and MEMS processes require one or several thin-film processing techniques, such as metal deposition, dielectric deposition, or etching of dielectric openings. Production costs and the probability of defects, however, increase with repeated thin-film processes. [0...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H04R17/00B41J2/05B41J2/14B41J2/16G11B5/127
CPCB41J2/14137Y10T29/49169B41J2/1628B41J2/1629B41J2/1631B41J2/1639B41J2/1642B41J2/1646Y10T29/4913Y10T29/49401Y10T29/49128Y10T29/42Y10T29/49126Y10T29/49346B41J2/1601
Inventor CHEN, WEI-LINHU, HUNG-SHENGLEE, IN-YAO
Owner BENQ CORP