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Phase-change random access memory and programming method

a random access memory and programming method technology, applied in the field of phase change random access memory and programming method, can solve the problems of affecting the reliability of information recording, requiring higher current for phase change, and/or affecting the reliability of programming, so as to achieve effective control of a threshold voltage and improve the reliability of information recording

Active Publication Date: 2007-08-16
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
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Benefits of technology

The patent text describes a programming method for improving the reliability of information recording in a PRAM (phase-change random access memory) by controlling the threshold voltage of a chalcogenide material using programming pulses. The method includes determining the amorphous state of the chalcogenide material by applying programming pulses to form programming areas with threshold voltages corresponding to logic high and logic low. The method also includes controlling the trailing edge of the programming pulses to control the quenching speed of the chalcogenide material and adjust the threshold voltage of the material. The method may be temporary and may involve applying a reading pulse to the programming area with the lower threshold voltage to allow a current to flow through it or to the programming area with the higher threshold voltage to prevent a current from flowing through it. The technical effect of this patent is to improve the reliability of information recording in PRAM by controlling the threshold voltage of the chalcogenide material using programming pulses.

Problems solved by technology

Conventional PRAMs may have disadvantages that a higher current may be required for a phase change and / or sizes of cells included in a PRAM may be larger.
Accordingly, achieving reliable programming may be problematic.

Method used

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  • Phase-change random access memory and programming method
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  • Phase-change random access memory and programming method

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Embodiment Construction

[0029]Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings. Embodiments may, however, be in many different forms and should not be construed as being limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope to those skilled in the art. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.

[0030]It will be understood that when a component is referred to as being “on,”“connected to” or “coupled to” another component, it can be directly on, connected to or coupled to the other component or intervening components may be present. In contrast, when a component is referred to as being “directly on,”“directly connected to” or “directly coupled to” another component, there are no intervening components present. As used herein, the term “and / or” includes any and all combinations...

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Abstract

A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and / or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.

Description

PRIORITY STATEMENT[0001]This application claims the benefit of priority to Korean Patent Application No. 10-2006-0015155, filed on Feb. 16, 2006 in the Korean Intellectual Property Office, and the benefit of priority to Korean Patent Application No. 10-2006-0045815, filed on May 22, 2006 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein in their entirety by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a phase-change random access memory (PRAM) and programming method for a phase-change random access memory (PRAM), and for example, to a phase-change random access memory (PRAM) and programming method for programming an amorphous state to control a threshold voltage of a PRAM.[0004]2. Description of Related Art[0005]Conventional phase-change random access memories (PRAMs) may use a resistance difference between amorphous and crystalline phases of chalcogenide. Conventional PRAMs may have disadvantages that a higher ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/00
CPCG11C13/0004G11C13/0069G11C2213/77G11C2013/0092G11C2013/009
Inventor SUH, DONG-SEOKLEE, EUN-HONGNOH, JIN-SEO
Owner SAMSUNG ELECTRONICS CO LTD
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