Nitride semiconductor light emitting device array

Abstract

A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.

Description

CLAIM OF PRIORITY[0001]This application claims the benefit of Korean Patent Application No. 2006-0060699 filed on Jun. 30, 2006, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a light emitting device array and, more particularly, to a light emitting device array having a plurality of hexagonal pyramid light emitting structures formed by selective growth.[0004]2. Description of the Related Art[0005]Recently, researches have been actively conducted on semiconductor light emitting devices as a new light source that can replace filament-based light bulbs and fluorescent lamps. In particular, the researches on light emitting diodes (LEDs) using nitride compound semiconductors such as GaN have been gaining attention. Without a suitably compatible substrate, however, nitride crystals tend to have many crystal defects.[0006]To remedy such ...

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Benefits of technology

[0013]An aspect of the present invention provides a nitride semiconductor light emitting device array, which maximizes a light emission area formed by a plurality of hexagonal pyramid light emission structures by improving an arrangement of the hexagonal pyramid light emission structures and windows.

[0019]A vertical-structure nitride semiconductor light emitting device array according to another embodiment may further include a light-transmitting conductive layer with the first conductivity lower nitride semiconductor layer formed thereon; a first electrode formed on a surface of the light-transmitting conductive layer; a reflective electrode layer formed on the second conductivity nitride semiconductor layer; and a conductive support structure formed on the reflective electrode layer to function as a second electrode. In particular, in the vertical structure light emitting device array according to the present invention, since reflecting layers are formed on the upper surfaces of the hexagonal pyramid light emitting structure, light is focused and extracted through the first conductivity lower nitride semiconductor layer, thereby significantly improving the light extraction efficiency.

Problems solved by technology

Without a suitably compatible substrate, however, nitride crystals tend to have many crystal defects.

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