Liquid crystal display device and manufacture method thereof

a technology of liquid crystal display and liquid crystal, which is applied in the direction of mirrors, instruments, coatings, etc., can solve the problem of uneven surface of metal layers, and achieve the effect of simple and easy production

Inactive Publication Date: 2008-04-17
QUANTA DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This method simplifies the production of reflective LCDs by creating a rugged surface through nitrogen-induced lattice distortion, reducing production time and labor costs while maintaining reflectivity and adhesion, suitable for mass production.

Problems solved by technology

The atomic cells in the lattice are altered in the presence of nitrogen atoms, and due to the existence of nitrogen atoms, it makes the surface of the metal layer uneven because of twisted atomic cells in the metal lattice caused by inner repulsion once nitrogen is added into the metal layer.

Method used

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  • Liquid crystal display device and manufacture method thereof
  • Liquid crystal display device and manufacture method thereof
  • Liquid crystal display device and manufacture method thereof

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Experimental program
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first preferred embodiment

[0030] Please refer to FIG. 4(a). First, a substrate 10 is provided. In this embodiment, the substrate is a glass substrate 10. Then, a layer of thick metal 20 as a first metal layer is deposited on the substrate 10. The metal layer is made of Al, or an Al-containing soft alloy, preferably a layer of Al in the preferred embodiment. In addition, in order to increase the adhesion between the Al layer 20 and the substrate 10, a buffer layer 11 is formed between the Al layer 20 and the glass substrate 10 to prevent the Al layer 20 from stripping from the glass substrate 10 during subsequent steps in an environment of extreme high temperature and high pressure. The buffer layer is any suitable material, preferably Ti, titanium nitride, Mo, Cr or the alloys thereof. Ti layer 11 is preferred in this embodiment. The Al layer 20 is formed according to any deposition method or formation method. In this preferred embodiment, sputtering is used. Then, as shown in FIG. 4(b), a layer of aluminum ...

embodiment 2

Preferred Embodiment 2

[0033] Because aluminum nitride layer 30 does not possess desirable reflective character, a reflective layer 40 is formed above aluminum nitride layer 30 in this embodiment.

[0034] Referring to FIG. 5 (a), a Ti layer 11 functioned as buffer layer and an Al layer 20 are deposited on a glass substrate 10 in order. Then, as shown in FIG. 5 (b), a aluminum nitride layer 30 is formed above the Al layer 20 by sputtering deposition in a vacuum sputtering chamber, and the resultant Al layer 20 has a rough surface.

[0035] A reflective layer 40 is directly formed above the aluminum nitride layer 30. In this embodiment, the reflective layer 40 is made of Al. Finally, a transparent conductive layer 50 such as ITO, IZO is formed above the reflective layer 40, as shown in FIG. 5(c).

embodiment 3

Preferred Embodiment 3

[0036] Alternatively, after the aluminum nitride layer 30 is formed, the aluminum nitride layer 30 is removed to reveal an Al layer 20 with rough surface to function as reflective layer to proceed with any suitable subsequent procedure.

[0037] Referring to FIG. 6(a), a glass substrate 10 is provided. Then a Ti layer 11 as buffer layer and an Al layer 20 are deposited on the substrate 10 in order. Afterwards, as shown in FIG. 6(b), a aluminum nitride layer 30 is formed on the Al layer 20 by sputtering deposition in a vacuum sputtering chamber. Similarly, when the aluminum nitride layer 30 is deposited on the Al layer 20, an irregularly rough surface is formed due to the presence of nitrogen atoms inserted among the Al atoms. After the aluminum nitride layer 30 is removed, the surface of Al layer 20 remains rough, as shown in FIG. 6(c). In this embodiment, the aluminum nitride layer 30 is removed by etching. Finally, a transparent conductive layer 50 such as ITO,...

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Abstract

A method of manufacturing a reflecting substrate in a liquid crystal display device is disclosed, comprising the steps of: (a) providing a substrate having a first metal layer, wherein the first metal layer is formed with at least one soft metal or the alloys thereof; and (b) forming an aluminum nitride layer on the first metal layer. The method of the present invention is capable of forming a rugged, shining, reflective layer on a transflective, or a reflection type TFT LCD with simple steps and low cost.

Description

[0001] This application is a continuation application of pending U.S. application Ser. No. 11 / 269,616 filed Nov. 9, 2005 (of which the entire disclosure of the pending, prior application is hereby incorporated by reference).BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a LCD device and more particularly, to a LCD device with rugged, shining, reflective layer. [0004] 2. Description of Related Art [0005] LCD devices are usually available in four types: reflective type, transflective type, projective type and transmissive type. Other than reflective type, most LCD devices are transmissive type. The light source of this type mainly depends on the backlight behind the liquid crystal panel to make the LCD visible. Due to limited brightness, the screen becomes blur and invisible when exposed to sunlight directly because the sunlight reflected from the surface of the screen overshadows the images formed on the LCD. [0006] The reflective...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): B05D5/06
CPCG02B5/0858G02F1/133555G02F1/133553G02B5/10
InventorCHEN, CHING-HUNGSHIN, LUNG-PAOTSAI, MING-YAN
OwnerQUANTA DISPLAY