Liquid crystal display device and manufacture method thereof
a technology of liquid crystal display and liquid crystal, which is applied in the direction of mirrors, instruments, coatings, etc., can solve the problem of uneven surface of metal layers, and achieve the effect of simple and easy production
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first preferred embodiment
[0030] Please refer to FIG. 4(a). First, a substrate 10 is provided. In this embodiment, the substrate is a glass substrate 10. Then, a layer of thick metal 20 as a first metal layer is deposited on the substrate 10. The metal layer is made of Al, or an Al-containing soft alloy, preferably a layer of Al in the preferred embodiment. In addition, in order to increase the adhesion between the Al layer 20 and the substrate 10, a buffer layer 11 is formed between the Al layer 20 and the glass substrate 10 to prevent the Al layer 20 from stripping from the glass substrate 10 during subsequent steps in an environment of extreme high temperature and high pressure. The buffer layer is any suitable material, preferably Ti, titanium nitride, Mo, Cr or the alloys thereof. Ti layer 11 is preferred in this embodiment. The Al layer 20 is formed according to any deposition method or formation method. In this preferred embodiment, sputtering is used. Then, as shown in FIG. 4(b), a layer of aluminum ...
embodiment 2
Preferred Embodiment 2
[0033] Because aluminum nitride layer 30 does not possess desirable reflective character, a reflective layer 40 is formed above aluminum nitride layer 30 in this embodiment.
[0034] Referring to FIG. 5 (a), a Ti layer 11 functioned as buffer layer and an Al layer 20 are deposited on a glass substrate 10 in order. Then, as shown in FIG. 5 (b), a aluminum nitride layer 30 is formed above the Al layer 20 by sputtering deposition in a vacuum sputtering chamber, and the resultant Al layer 20 has a rough surface.
[0035] A reflective layer 40 is directly formed above the aluminum nitride layer 30. In this embodiment, the reflective layer 40 is made of Al. Finally, a transparent conductive layer 50 such as ITO, IZO is formed above the reflective layer 40, as shown in FIG. 5(c).
embodiment 3
Preferred Embodiment 3
[0036] Alternatively, after the aluminum nitride layer 30 is formed, the aluminum nitride layer 30 is removed to reveal an Al layer 20 with rough surface to function as reflective layer to proceed with any suitable subsequent procedure.
[0037] Referring to FIG. 6(a), a glass substrate 10 is provided. Then a Ti layer 11 as buffer layer and an Al layer 20 are deposited on the substrate 10 in order. Afterwards, as shown in FIG. 6(b), a aluminum nitride layer 30 is formed on the Al layer 20 by sputtering deposition in a vacuum sputtering chamber. Similarly, when the aluminum nitride layer 30 is deposited on the Al layer 20, an irregularly rough surface is formed due to the presence of nitrogen atoms inserted among the Al atoms. After the aluminum nitride layer 30 is removed, the surface of Al layer 20 remains rough, as shown in FIG. 6(c). In this embodiment, the aluminum nitride layer 30 is removed by etching. Finally, a transparent conductive layer 50 such as ITO,...
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