Light emitting diode chip

Abstract

A substrate-free LED chip has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.

Description

REFERENCE TO PRIOR APPLICATION[0001]This application claims the benefit of U.S. Provisional Patent Application Ser. No. 60 / 925,961, filed on Apr. 23, 2007, which is herein incorporated by reference.TECHNICAL FIELD[0002]The present invention is a thick light emitting diode chip, is substrate-free and requires no growth substrate or transfer substrate for structural support.BACKGROUND OF THE INVENTION[0003]Light emitting diodes (LEDs) can be fabricated by epitaxially growing multiple layers of semiconductors on a growth substrate. Inorganic light-emitting diodes can be fabricated from GaN-based semiconductor materials containing gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium nitride (InN), indium gallium nitride (InGaN) and aluminum indium gallium nitride (AlInGaN). Other appropriate materials for LEDs include, for example, aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), indium gallium ars...

AI Technical Summary

Benefits of technology

[0015]In one embodiment of this invention, an assembly for a thick substrate free light emitting diode chip includes a multilayer semiconductor structure on a growth substrate. The multilayer semiconductor structure includes a first doped layer proximal to the growth substrate, an active region, and a second doped layer distal from the growth substrate with an active region interposed between the first doped layer and the second doped layer. The multilayer semiconductor structure is preferably at least 10 microns thick, but can be 30 microns or more thick

Problems solved by technology

These growth methods are relatively slow and expensive.

Thick layers of GaN-based materials are, however, difficult to etch, especially anisotropically.

The heat lowers the light output and operating lifetime of the LED.

As LED sizes become larger, such heating effects become more important and can seriously degrade the light-output performance and lifetime of the LEDs.

Sapphire is a poor thermal conductor.

Cheung et al. do not disclose using a raster-scanned pulsed laser beam to both separate the semiconductor layer from the substrate and to simultaneously form surface features that can be used as light extraction elements in LED devices fabricated from the semiconductor layer.

Cheung et al. also do not disclose methods to etc

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