Light emitting diode chip

a light-emitting diode and chip technology, applied in the direction of semiconductor/solid-state device manufacturing, electrical equipment, semiconductor devices, etc., can solve the problems of difficult etching of thick layers of gan-based materials, reducing the light output and operating life of leds, and relatively slow growth methods
US20080258165A1Inactive Publication Date: 2008-10-23GOLDENEYE
6 Cites 87 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
GOLDENEYE
Publication Date
2008-10-23
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A substrate-free LED chip has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.
Need to check novelty before this filing date? Find Prior Art

Description

REFERENCE TO PRIOR APPLICATION

[0001] This application claims the benefit of U.S. Provisional Patent Application Ser. No. 60 / 925,961, filed on Apr. 23, 2007, which is herein incorporated by reference.TECHNICAL FIELD

[0002] The present invention is a thick light emitting diode chip, is substrate-free and requires no growth substrate or transfer substrate for structural support.BACKGROUND OF THE INVENTION

[0003] Light emitting diodes (LEDs) can be fabricated by epitaxially growing multiple layers of semiconductors on a growth substrate. Inorganic light-emitting diodes can be fabricated from GaN-based semiconductor materials containing gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium nitride (InN), indium gallium nitride (InGaN) and aluminum indium gallium nitride (AlInGaN). Other appropriate materials for LEDs include, for example, aluminum gallium indium phosphide (AlGaInP), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), indium gallium ars...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More