High temperature cathode for plasma etching

Abstract

The present invention generally is a cathode suitable for use in high temperature plasma etch applications. In one embodiment, the cathode includes a ceramic electrostatic chuck secured to a base. The base has cooling conduits formed therein. A rigid support ring is disposed between the chuck and the base, thereby maintaining the chuck and the base in a spaced-apart relation.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit to U.S. Provisional Patent application Ser. No. 60 / 949,833, filed on Jul. 13, 2007.BACKGROUND[0002]1. Field of the Invention[0003]Embodiments of the present invention generally relate to semiconductor substrate processing systems. More specifically, the invention relates to a high temperature cathode suitable for plasma etching.[0004]2. Description of the Related Art[0005]In semiconductor wafer processing, the trend towards increasingly smaller feature size and linewidths have placed a premium on the ability to mask, etch, and deposit material on a semiconductor workpiece, or wafer, with greater precision. Plasma etching is of particular importance in obtaining critical dimensions less than 1.0 micron.[0006]Typically, plasma etching is accomplished by applying a RF power to a working gas supplied over a substrate held by a pedestal in a low pressure environment. The resulting electric field creates a reacti...

AI Technical Summary

Benefits of technology

[0017]In another embodiment, a plasma processing cathode includes a base, a ceramic electrostatic chuck and rigid support ring maintaining a bottom of the electrostatic chuck and the base in a spaced-apart relation. The electrostatic chuck has a plurality of gas feeds extending from the bottom surface of the electrostatic chuck to a top surface the electrostatic chuck. A fluid distribution ring is disposed between the base and the electrostatic chuck. The fluid distribution ring is spaced from the base to define an annular channel therebetween. The fluid distribution ring includes a plurality of gas passages configured to direct gas through the fluid distribution ring from the channel to the electrostatic chuck. A plurality of ceramic baffles are disposed in the gas

Problems solved by technology

For example, the large differences in thermal expansion encountered between ceramic and metal components may result in damage to the ceramic component.

The inability to control substrate temperature uniformity has an adverse effect on process uniformity both within a single substrate and between substrates, device yield and overall quality of processed substrates.

Images