Method of manufacturing semiconductor device having transition metal oxide layer and related device

Abstract

Provided is a method of manufacturing a semiconductor device having a switching device capable of preventing a snake current. First, a transition metal oxide layer and a leakage control layer are alternately stacked on a substrate 1 to 20 times to form a varistor layer. The transition metal oxide layer is formed to contain an excessive transition metal compared to its stable state. The leakage control layer may be formed of one selected from the group consisting of a Mg layer, a Ta layer, an Al layer, a Zr layer, a Hf layer, a polysilicon layer, a conductive carbon group layer, and a Nb layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2007-0072959, filed Jul. 20, 2007, the contents of which are hereby incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates generally to semiconductor memory devices and, more particularly, to methods of manufacturing semiconductor devices.[0004]2. Description of the Related Art[0005]Research into high integration of memory devices has been widespread. A memory device includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Memory devices are classified as volatile memory devices and non-volatile memory devices depending on characteristics of data stored in the memory cells. A non-volatile memory device maintains data stored in the memory cells even when power is cut off.[0006]A non-volatile memory device includes a flash memory, a Magnetic Ran...

AI Technical Summary

Benefits of technology

The present invention provides a method for manufacturing a semiconductor device with a switching device that prevents a snake current. The method involves stacking a transition metal oxide layer and a leakage control layer on a substrate to form a varistor layer. The varistor layer contains an excessive transition metal compared to its stable state. The invention also provides a semiconductor device with a varistor layer that can be formed by alternately stacking a transition metal oxide layer and a leakage control layer. The invention also provides a semiconductor device with a data storage element, such as a variable resistance layer, a phase-change material layer, a polymer pattern, a MTJ, or a ferroelectric pattern. The invention further provides a semiconductor device with a substrate and a varistor layer that can be formed by alternately stacking a transition metal oxide layer and a leakage control layer. The invention provides a method for manufacturing a semiconductor device with a switching device that prevents a snake current and has improved data storage capacity.

Problems solved by technology

A snake current can cause memory cells to malfunction.

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