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8 results about "Carbon group" patented technology

The carbon group is a periodic table group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), and flerovium (Fl). It lies within the p-block. In modern IUPAC notation, it is called Group 14. In the field of semiconductor physics, it is still universally called Group IV. The group was once also known as the tetrels (from the Greek word tetra, which means four), stemming from the Roman numeral IV in the group names, or (not coincidentally) from the fact that these elements have four valence electrons (see below). They are also known as the crystallogens.

Photoresponsive material, method for manufacturing a photoresponsive material, and photoresponsive device

To provide a photoresponsive material that solves at least one of the problems of conventional technology. [Solution] The material has a crystalline structure formed by crosslinking at least one lanthanide with an organic group having 1 to 3 carbon atoms, wherein the organic group contains at least carbon atoms which may be partially or entirely substituted with other nonmetallic carbon group elements, and oxygen atoms which may be partially or entirely substituted with other nonmetallic oxygen group elements. A photoresponsive material having a peak component in the range of 533 eV to 534 eV in the O1s spectrum obtained by hard X-ray photoelectron spectroscopy.
Owner:NAT INST FOR MATERIALS SCI +1

Method for producing and purifying nanodiamond doped with carbon group elements

The present invention provides a method for producing nanodiamonds doped with carbon group elements, the method comprising: a detonation step of exploding an explosive composition containing at least one explosive and at least one carbon group element compound in a closed container to obtain nanodiamonds doped with at least one carbon group element selected from Si, Ge, Sn and Pb; and a step of subjecting the nanodiamonds doped with carbon group elements to an alkali treatment to remove the carbon group elements and / or their oxides.
Owner:DAICEL CORP

Preparation method of hollow graphene@IVA group oxide composite material and its products and applications

The present invention discloses a method for preparing a hollow graphene@Group IVA oxide composite material, comprising the following steps: S1: mixing a template and phthalocyanine; S2: pyrolyzing the material obtained in step S1 at high temperature, followed by cooling to room temperature; S3: adding an alcohol solvent and a surfactant to the material obtained in step S2, mixing them uniformly, then adding a carbon group element source and stirring, and then adding water for hydrolysis, washing the reaction product with an organic solvent and drying to obtain a composite powder; S4: pyrolyzing the composite powder in step S3, followed by washing and drying to obtain the hollow graphene@Group IVA oxide composite material. The composite material can be used to prepare a porous negative electrode material for lithium-ion batteries, exhibiting good electrochemical performance in a half-cell and effectively mitigating the volume expansion of tin dioxide and silicon oxide during charge and discharge.
Owner:SINOPEK PETROLEUM IZHINIRING TECH SERVIS KO LTD +1

Organic electroluminescent elements and electronic devices

An organic electroluminescent element (1) has an anode (3), a cathode (4), a first light-emitting layer (51), and a second light-emitting layer (52) disposed between the first light-emitting layer (51) and the cathode (4). The first light-emitting layer (51) contains a first compound having at least one group represented by the following general formula (11) as a first host material, and the second light-emitting layer (52) contains a second compound represented by the following general formula (2) as a second host material. The first light-emitting layer (51) and the second light-emitting layer (52) are directly connected. 101 Ar is a single bond or a substituted or unsubstituted cyclic aryl group with 6 to 50 carbon atoms. 101 The aryl group is a substituted or unsubstituted cyclic carbon group with 6 to 50 carbon atoms, and mx is 0, 1, 2, 3, 4 or 5.
Owner:IDEMITSU KOSAN CO LTD

Core-shell quantum dot and preparation method therefor, and quantum dot device

PCT designated stageWO2026174593A1Chemical physicsHalogen
Provided in the present disclosure are a core-shell quantum dot and a preparation method therefor, and a quantum dot device. The core-shell quantum dot comprises a quantum dot core and a first shell layer structure that coats the outer surface of the quantum dot core, wherein the first shell layer structure is zero-dimensional perovskite, and has a chemical formula of A4BX6, where A comprises at least one of an amine organic group and an inorganic metal, B is a carbon group element, and X is a halogen element.
Owner:BOE TECHNOLOGY GROUP CO LTD +1

Hydrophilic copolymer and hydrophilic composition

PendingCN119384439ACoatingsArylHydrogen atom
A hydrophilic copolymer comprising a structural unit (a) represented by formula (1) and a structural unit (b) represented by formula (2) forms a coating film having excellent hydrophilicity and antifogging properties. (In formula (1), R1 represents a hydrogen atom or a methyl group, R2 represents-(C2H4O) m-R6 or-(C3H6O) m-R6, m represents an integer of 1-50, R6 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms, X1 represents a divalent linking group, in formula (2), R3 represents a hydrogen atom or a methyl group, R4 and R5 each independently represent an alkyl group having 1-10 carbon atoms or an aryl group having 6-10 carbon atoms, X2 represents a divalent linking group, n represents an integer of 1-3, and n represents an integer of 1-3. And star number * represents a bond to an adjacent structural unit. > # imgabs0 #
Owner:SHIN ETSU CHEMICAL CO LTD

Method for prolonging service life of minority carriers of SiC epitaxy

The invention discloses a method for prolonging the service life of a SiC epitaxial minority carrier, and relates to the field of semiconductor materials. The method comprises the following steps: S1, after a SiC substrate is subjected to standard cleaning, epitaxially growing an epitaxial layer with the thickness of more than 10 microns; s2, carrying out standard cleaning again, carrying out high-temperature oxidation on the 4H-SiC epitaxial wafer in an O2 atmosphere, forming a SiO2 oxide layer and partial interstitial carbon atoms and carbon clusters on the SiC surface, and carrying out NO high-temperature passivation annealing; s3, removing a surface oxide layer of the SiC epitaxial wafer subjected to high-temperature oxidation and surface passivation treatment by using a BOE solution, and performing standard cleaning again; s4, putting the SiC epitaxial wafer into a high-temperature annealing device, raising the temperature, reducing the pressure intensity of a furnace chamber, and performing low-pressure hydrogen annealing on the SiC epitaxial wafer in an H2 atmosphere; and S5, repeating the steps S2 to S4. High-temperature oxidation and low-pressure hydrogen annealing are combined, so that the time required by high-temperature oxidation is shortened, the epitaxial wafer with longer minority carrier lifetime is obtained, and the minority carrier lifetime of N and P type SiC can be effectively prolonged.
Owner:XIAMEN UNIV

Tetradentate metal complexes with carbon group bridging ligands

Platinum, palladium, and gold complexes suitable for use as phosphorescent emitters or as delayed fluorescent and phosphorescent emitters in organic light emitting materials (OLEDs) having a structure of Formula VII or Formula IX
Owner:THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIV OF ARIZONA