Etching process apparatus and member for etching process chamber

a technology of etching process chamber and process apparatus, which is applied in the field of etching, can solve the problems of chemically damaged to produce fine sio, the inner wall materials of the etching process container are notable to be depleted, and the damage of each member in the container is more severe, so as to achieve the effect of diminishing pores and improving production yield

Inactive Publication Date: 2009-07-23
HITACHI HIGH-TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0012]It is an object of the present invention to provide an etching device and internal member for etching process chamber which can suppress evolution of foreign matter to improve producti

Problems solved by technology

Processes for producing semiconductor devices, liquid-crystal displays and so forth have generally problems of notable corrosion-caused depletion of inner wall materials for etching process containers, because they use treat gases, beginning with fluorides, e.g., SF6 and CF4,

Method used

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  • Etching process apparatus and member for etching process chamber
  • Etching process apparatus and member for etching process chamber
  • Etching process apparatus and member for etching process chamber

Examples

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[0037]One example of the present invention is described by referring to FIGS. 1, 2, 3 and 4.

[0038]FIG. 1 shows a cross-sectional view, cut in the longitudinal direction, outlining an etching process apparatus structure of this example of the present invention. As illustrated, the etching process apparatus of this example comprises a process chamber 100 which is a vacuum container containing an etching process chamber 110, and means for supplying an electrical and magnetic fields into the etching process chamber 110 to produce a plasma therein and means for supplying a treat gas into the etching process chamber 110, both means disposed above the chamber 110. It also equipped with an exhaust valve 131 and exhaust pump 132 disposed below, and in communication with, the etching process chamber 110, to exhaust the chamber.

[0039]The etching process chamber, capped by a lid member 101, comprises an antenna 102 disposed below the lid 101, and magnetic field generating section 103 disposed a...

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Abstract

It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield.
An etching process apparatus comprising:
    • a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma;
    • a member held inside of the process chamber; and
    • a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.

Description

FIELD OF THE INVENTION [0001]The present invention relates to an etching process apparatus for processing a substrate-shape sample, e.g., semiconductor wafer, in a vacuum chamber, and a member which constitutes an etching process chamber, more specifically an etching process apparatus whose member, e.g., inner wall, has a surface exposed to a plasma is coated with a film more resistant to plasma than the member, and member which constitutes the etching process chamber.BACKGROUND OF THE INVENTION [0002]It is known that an etching process apparatus has improved resistance to plasma by coating the etching process chamber container with a sprayed coating film of Y2O3 or the like having a porosity of 5 to 10%, as disclosed by JP-A-2001-164354 (Patent Document 1).BRIEF SUMMARY OF THE INVENTION [0003]Processes for producing semiconductor devices, liquid-crystal displays and so forth have generally problems of notable corrosion-caused depletion of inner wall materials for etching process co...

Claims

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Application Information

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IPC IPC(8): C23F1/02
CPCH01J2237/3343H01J37/32495H01L21/302
Inventor FURUSE, MUNEOKIMURA, SHINGOKADOTANI, MASANORI
Owner HITACHI HIGH-TECH CORP
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