Memory cell that includes a carbon-based memory element and methods of forming the same

Abstract

Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a layer of carbon material above a substrate, forming a barrier layer above the carbon layer, forming a hardmask layer above the barrier layer, forming a photoresist layer above the hardmask layer, patterning and developing the photoresist layer to form a photoresist region, patterning and etching the hardmask layer to form a hardmask region, and using an ashing process to remove the photoresist region while the barrier layer remains above the carbon layer. Other aspects are also provided.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Patent Application Ser. No. 61 / 087,164, filed Aug. 7, 2008, “Methods And Apparatus For Forming Memory Cells Using Carbon Read Writable Materials,” which is hereby incorporated by reference herein in its entirety for all purposes.TECHNICAL FIELD[0002]This invention relates to non-volatile memories, and more particularly to a memory cell that includes a carbon-based memory element, and methods of forming the same.BACKGROUND[0003]Non-volatile memories formed from reversible resistance switching elements are known. For example, U.S. patent application Ser. No. 11 / 968,154, filed Dec. 31, 2007, titled“Memory Cell That Employs A Selectively Fabricated Carbon Nano-Tube Reversible Resistance Switching Element And Methods Of Forming The Same” (the “'154 Application”), which is hereby incorporated by reference herein in its entirety for all purposes, describes a rewriteable non-volatile memory ...

AI Technical Summary

Benefits of technology

[0006]In a second aspect of the invention, a method of forming a memory cell is provided, the method including forming a layer of carbon material above a substrate, forming a photoresist layer above the carbon layer, patterning and developing the photoresist layer to form a photoresist region, patterning and etching the carbon layer using the photoresist region, and performing an ashing process to remove the photoresist region without substantially damaging an exposed sidewall of the etched carbon layer.

Problems solved by technology

This is problematic, because trapped moisture may result in de-lamination of carbon material and degradation in switching.

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