Memory cell that includes a carbon-based memory element and methods of forming the same

a memory element and memory cell technology, applied in the field of nonvolatile memories, can solve problems such as delamination of carbon materials and degradation of switching effects

Inactive Publication Date: 2010-02-11
SANDISK TECH LLC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0006]In a second aspect of the invention, a method of forming a memory cell is provided, the method including forming a layer of carbon material above a substrate, forming a photoresist layer above the carbon layer, patterning and developing the phot...

Problems solved by technology

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  • Memory cell that includes a carbon-based memory element and methods of forming the same
  • Memory cell that includes a carbon-based memory element and methods of forming the same
  • Memory cell that includes a carbon-based memory element and methods of forming the same

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Embodiment Construction

[0017]Carbon films such as amorphous carbon (“aC”) containing nanocrystalline graphene (referred to herein as “graphitic carbon”), graphene, graphite, carbon nano-tubes, amorphous diamond-like carbon (“DLC”) (described below), silicon carbide, boron carbide and other similar carbon-based materials may exhibit resistivity-switching behavior that may make such materials suitable for use in microelectronic non-volatile memories.

[0018]Indeed, some carbon-based materials have demonstrated reversible resistivity-switching memory properties on lab-scale devices with a 100× separation between ON and OFF states and mid-to-high range resistance changes. Such a separation between ON and OFF states renders carbon-based materials viable candidates for memory cells formed using the carbon materials in memory elements in series with steering elements, such as tunnel junctions, diodes, thin film transistors, or the like.

[0019]A carbon-based resistivity-switching material may be characterized by its...

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Abstract

Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a layer of carbon material above a substrate, forming a barrier layer above the carbon layer, forming a hardmask layer above the barrier layer, forming a photoresist layer above the hardmask layer, patterning and developing the photoresist layer to form a photoresist region, patterning and etching the hardmask layer to form a hardmask region, and using an ashing process to remove the photoresist region while the barrier layer remains above the carbon layer. Other aspects are also provided.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Patent Application Ser. No. 61 / 087,164, filed Aug. 7, 2008, “Methods And Apparatus For Forming Memory Cells Using Carbon Read Writable Materials,” which is hereby incorporated by reference herein in its entirety for all purposes.TECHNICAL FIELD[0002]This invention relates to non-volatile memories, and more particularly to a memory cell that includes a carbon-based memory element, and methods of forming the same.BACKGROUND[0003]Non-volatile memories formed from reversible resistance switching elements are known. For example, U.S. patent application Ser. No. 11 / 968,154, filed Dec. 31, 2007, titled“Memory Cell That Employs A Selectively Fabricated Carbon Nano-Tube Reversible Resistance Switching Element And Methods Of Forming The Same” (the “'154 Application”), which is hereby incorporated by reference herein in its entirety for all purposes, describes a rewriteable non-volatile memory ...

Claims

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Application Information

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IPC IPC(8): H01L47/00
CPCG11C2213/35H01L45/1641H01L21/3146H01L21/318H01L27/101H01L27/2409H01L27/2463H01L27/2481H01L45/1233H01L45/149H01L45/1616H01L45/1625H01L45/1675H01L45/04G11C2213/71H10B63/20H10B63/80H10B63/84H10N70/20H10N70/826H10N70/8845H10N70/023H10N70/026H10N70/041H10N70/063H01L21/02115H01L21/0217
Inventor XU, HUIWEN
Owner SANDISK TECH LLC
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