High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation

Abstract

The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application claims the benefit and priority under 35 U.S.C. §119 of U.S. Provisional Application No. 61 / 093,936 filed on Sep. 3, 2008, and U.S. Provisional Application No. 61 / 155,315, filed on Feb. 25, 2009, both of which are hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like.BACKGROUND[0003]Femtosecond laser irradiation of silicon in the presence of a chalcogen (such as sulfur) under specific conditions has been shown to enable photoactive devices with desirable characteristics. These characteristics include higher sensitivity, extended wavelength response, and higher quantum efficiency at certain wavelengths than untreated silicon. In known systems, the sulfur (or other present ambient che...

AI Technical Summary

Benefits of technology

[0005]The following is a simplified summary of the invention in order to provide a basic understanding of some of the aspects of the

Problems solved by technology

Requiring a laser to perform both dopant introduction and the subsequent unique arrangement of atoms, however, may not be as efficient or as controllable as needed.

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