Method for manufacturing soi substrate

Abstract

A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

Description

TECHNICAL FIELD[0001]The present invention relates to a method for manufacturing an SOI substrate having a single-crystal silicon thin film on a transparent insulating substrate.BACKGROUND ART[0002]As a method for manufacturing an SOI substrate, there are known the SmartCut method, the SiGen method, and the like based on conventional bonding.[0003]The SmartCut method is a method in which a silicon substrate, on the bonding side of which hydrogen ions have been implanted, and a substrate made also of silicon or of another material are bonded together and subjected to a heat treatment at a temperature of 400° C. or higher (for example, 500° C.). Then, a silicon thin film is thermally peeled off from a region where the concentration of the implanted hydrogen ions is highest, thus obtaining an SOI substrate (see, for example, Japanese Patent No. 3048201 (patent document 1) and A. J. Auberton-Herve et al., “SMART CUT TECHNOLOGY: INDUSTRIAL STATUS of SOI WAFER PRODUCTION and NEW MATERIAL ...

AI Technical Summary

Benefits of technology

The present invention provides a method for manufacturing an SOI substrate with a superior SOI layer that is uniform in film and crystal quality, and has good electrical characteristics. The method involves forming a hydrogen ion-implanted layer on a single-crystal silicon substrate, applying a surface activation treatment to at least one of a transparent insulating substrate and the surface of the first substrate, bonding together the surface of the first and second substrates, and forming an SOI layer on the surface of the second substrate by peeling off a silicon layer from the first substrate. The method also involves heat-treating the substrates after bonding and applying separation-accelerating external impact to the substrates. The method prevents breakage and local cracks due to differences in thermal properties between the substrates and avoids mechanical damage to the silicon thin film peeled off from the surface of the silicon substrate.

Problems solved by technology

Consequently, if the temperature of heat treatment applied to the substrates being bonded in a manufacturing process becomes higher, the substrates are more likely to cause breakage or local cracks due to a difference in thermal properties between the both substrates.

However, this method in which a silicon thin film is peeled off mechanically has the problem that it is more likely that the bonded surfaces of the substrates separate from each other, traces of separation arise, or mechanical damage is introduced into the silicon thin film during a separation process.

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