Light-emitting diode and manufacturing method thereof
a technology of light-emitting diodes and manufacturing methods, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical apparatus, semiconductor devices, etc., can solve the problems of difference in voltage characteristics, inability to achieve the goal of double-side emission, and complex design of control circuits
Inactive Publication Date: 2011-05-26
EVERLIGHT ELECTRONICS
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- Application Information
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Benefits of technology
The present invention provides a light-emitting diode (LED) with double-side emission and a manufacturing method thereof. The LED includes a transparent substrate, a first transparent conductive layer, a second transparent conductive layer, a plurality of metal circuits, and a LED chip. The LED chip is electrically connected to the metal circuits and emits light towards the transparent substrate. The manufacturing method includes forming the first and second transparent conductive layers, disposing the metal circuits on the conductive layers, and isolating the metal circuits from each other using an insulating layer. The technical effect of this invention is to provide an LED with double-side emission and a more efficient method of manufacturing.
Problems solved by technology
However, the light emitting chip is fixed on the non-transparent printed circuit board, and the goal of the double-side emission can not be accomplished.
Taking the white LED module of the backlight module as an example, because the white LED module is made with red, green and blue LEDs, the epitaxial materials of different color die are difference, and further the voltage characteristics are difference and the design of the control circuit is more complex.
Method used
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Embodiment Construction
[0029]FIGS. 1A-1D are schematic cross-sectional flowcharts illustrating a manufacturing process of a light-emitting (LED) diode according to an embodiment of the present invention.
[0030]First, as shown in FIG. 1A, a transparent substrate 100 whereon a transparent conductive material layer 110 has been formed is provided. A method of forming the transparent conductive material layer 110 is, for example, evaporation. A thickness of the transparent conductive material layer 110 can be between 1600˜2100 angstrom (Å), and a resistance of the transparent conductive material layer 110 is 10 ohmic (Ω).
[0031]FIG. 1B is a schematic cross-sectional diagram showing a first transparent conductive layer and a second transparent conductive layer formed on the transparent conductive material layer depicted in FIG. 1A. The first transparent conductive layer 113 and the second transparent conductive layer 114 are formed through etching the transparent conductive material layer 110. The method for etc...
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Abstract
A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is fromed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so tat the LED chip is electrically connected to the metal circuit.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 98140165, filed on Nov. 25, 2009. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of specification.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a light emitting diode (LED) and a manufacturing method thereof More particularly, the present invention relates to a light emitting diode with double-side emission and a manufacturing method thereof[0004]2. Description of Related Art[0005]Due to advantages of low power consumption and small volume, LEDs have been extensively applied to fabrication of different sized array light emitting module and applied in indicators in information, communication and consumptive electronic appliances and display devices.[0006]The light emitting module with double-side emission can be applied in the electronic devices, s...
Claims
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IPC IPC(8): H01L33/00H01L31/00
CPCH01L33/62H01L2924/0002H01L2924/00
Inventor WENG, SZU-YUANLIU, YU-HUAN
Owner EVERLIGHT ELECTRONICS