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Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus

a technology of substrate processing and semiconductor devices, applied in chemical instruments and processes, coatings, chemical vapor deposition coatings, etc., can solve the problems of aluminum nitride film not being sufficiently etched, film cracking, and product process yield reduction

Inactive Publication Date: 2011-12-01
SAKAI MASANORI +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables effective and efficient removal of films adhered to the processing chamber, reducing operational costs and improving product yield by utilizing a lower process temperature and oxidizing the films to facilitate easier etching with BCl3.

Problems solved by technology

If a film is deposited on the inside of the processing chamber to a large thickness, the film may crack due to increasing stresses, and thus contaminants (such as adhered materials that were stripped from the inside of the processing chamber) may be generated.
If such contaminants permeate the conductive film or insulating film formed on the substrate, the product process yield may be decreased.
However, if an aluminum nitride film is etched by using BCl3 (halogen-base gas) as a cleaning gas, the aluminum nitride film is not sufficiently etched so that it is difficult to remove the aluminum nitride film completely.

Method used

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  • Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
  • Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
  • Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus

Examples

Experimental program
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first embodiment

Film Forming Method, Film Modifying Method, and Cleaning Method

[0106]Next, explanations will be given on a method of forming conductive films or insulating films on wafers 200 in the processing chamber 201, a method of modifying the films, and a method of cleaning the inside of the processing chamber 201 in one of semiconductor device manufacturing processes performed using the processing furnace 202 of the substrate processing apparatus 101. An explanation will be given on an exemplary film forming method, in which an aluminum source such as TMA is used as a film forming source and NH3 is used as a nitriding agent so as to form aluminum nitride (AlN) films on wafers 200 by an atomic layer deposition (ALD) method. In addition, an explanation will be given on an exemplary cleaning method in which BCl3 is used as a cleaning gas to clean the inside of the processing chamber 201 by thermal chemical reaction. In the following description, the controller 280 controls parts of the substrat...

second embodiment

[0163]In the description of the current embodiment, an explanation will be given on the different with the first embodiment. The current embodiment has the same film forming process as the first embodiment. In a modifying process and a cleaning process of the current embodiment, the same operations are performed as in the first embodiment. However, timings of the processes are different as shown in FIG. 8. In the current embodiment, after the film forming process is performed until aluminum nitride films to be etched are grown to a predetermined thickness, the modifying process and the cleaning process are consecutively performed. In addition, as shown in FIG. 8 and FIG. 9, instead of performing the modifying process and the cleaning process only once, the processes are repeated predetermined times.

[0164]In detail, if the thickness of aluminum nitride films adhered to the inside of the processing chamber 201 reaches a predetermined value after the film forming process (repetition of...

third embodiment

[0166]In the description of the current embodiment, an explanation will be given on the different with the first embodiment. The current embodiment has the same film forming process as the first embodiment. In a modifying process and a cleaning process of the current embodiment, the same operations are performed as in the first embodiment but timings of the processes are different. That is, in the first embodiment, the modifying process and the cleaning process are regularly performed. However, in the current embodiment, the modifying process and the cleaning process are irregularly performed. For example, the modifying process and the cleaning process may be performed during an idle time of a production (substrate processing) lot.

[0167]In this case, the controller 280 calculates an accumulated film thickness based on the execution number of the film forming process, and determines whether to perform the modifying process and the cleaning process based on the calculated film thickne...

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Abstract

It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]The present application is a Divisional Application of application Ser. No. 12 / 862,180, filed Aug. 24, 2010; which claims priority under 35 U.S.C. §119 of Japanese Patent Application Nos. 2009-196950, filed on Aug. 27, 2009, and 2010-154278, filed on Jul. 6, 2010, in the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method of manufacturing a semiconductor device through a substrate processing process, and relates to a cleaning method and a substrate processing apparatus.[0004]2. Description of the Related Art[0005]As a method of forming a predetermined film on a substrate, there is a chemical vapor deposition (CVD) method. In a CVD method, two or more sources are caused to react with each other in a gaseous state or on the surface of a substrate to form a film including elements of source mol...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/34H01L21/00C23C16/52
CPCB08B7/00H01L21/28562C23C16/4405C23C16/4404H01L21/67028
Inventor SAKAI, MASANORIKAGA, YUKINAOYOKOGAWA, TAKASHISAITO, TATSUYUKI
Owner SAKAI MASANORI