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Thin film transistor array panel and method for manufacturing the same including forming a temperature dependent gate insulating layer

a technology of thin film transistors and array panels, which is applied in the direction of electrical equipment, semiconductor devices, instruments, etc., can solve the problems of degrading reliability, increasing the length of gate lines and data lines, and concomitant increase in wiring resistance, so as to achieve the effect of eliminating or reducing the agglomeration problem

Inactive Publication Date: 2012-01-19
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for manufacturing a thin film transistor array panel with gate lines containing silver (Ag) that do not agglomerate. The method includes forming a gate line on a substrate, sequentially adding layers of insulating material and a semiconductor layer, and then adding a data line and a drain electrode. The resulting panel includes a substrate, a gate line containing Ag, a first insulating layer, a second insulating layer, a data line, and a thin film transistor connected to the gate and data lines. The method and panel provide improved performance and reliability of thin film transistor arrays.

Problems solved by technology

Because of the trend to produce larger size display devices employing LCDs or AM-OLEDs, the lengths of the gate lines and the data lines are increasing with a concomitant increase in the resistance of the wiring.
However, silver reacts with the gas employed in subsequent processing and causes agglomeration and the formation of undesired protrusions in the wiring, degrading its reliability.

Method used

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  • Thin film transistor array panel and method for manufacturing the same including forming a temperature dependent gate insulating layer
  • Thin film transistor array panel and method for manufacturing the same including forming a temperature dependent gate insulating layer
  • Thin film transistor array panel and method for manufacturing the same including forming a temperature dependent gate insulating layer

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embodiment 1

[0029]First, a TFT array panel according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3. FIG. 1 is a layout view of a TFT array panel according to an embodiment of the present invention, and FIGS. 2 and 3 are sectional views of the TFT array panel shown in FIG. 1 taken along the line II-II and the line III-III, respectively. A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on an insulating substrate 110 made of a material such as transparent glass or plastic.

[0030]The gate lines 121 for transmitting gate signals extend substantially in a transverse direction. Each of the gate lines 121 includes a plurality of gate electrodes 124 that protrude downward and an end portion 129 having a large area for connection with another layer or an external driving circuit. A gate driver (not shown) for generating the gate signals may be mounted on a flexible printed circuit film (not shown) attached to the...

embodiment 2

[0063]Now, a TFT array panel according to another embodiment of the present invention will be described with reference to FIGS. 16 to 18. FIG. 16 is a layout view of a TFT array panel according to an embodiment of the present invention, and FIGS. 17 and 18 are sectional views of the TFT array panel shown in FIG. 16 taken along the line XVII-XVII and the line XVIII-XVIII. The structure of the TFT array panel according to the present embodiment is substantially the same as that illustrated in FIGS. 1 to 3.

[0064]A plurality of gate lines 121 having gate electrodes 124 and end portions 129 and a plurality of storage electrode lines 131 having storage electrodes 133a and 133b are formed on a substrate 110, and a gate insulating layer 140, a plurality of semiconductor stripes 151 having projections 154, a plurality of ohmic contact stripes 161 having projections 163, and a plurality of ohmic contact islands 165 are sequentially formed thereon. A plurality of data lines 171 having source e...

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Abstract

The present invention provides a thin film transistor array panel comprising a substrate; a gate line containing Ag formed on the substrate at a low temperature to prevent agglomeration, a first gate insulating layer formed on the gate line, a second gate insulating layer formed on the first gate insulating layer, a data line perpendicularly intersecting the gate line, and a thin film transistor connected to the gate line and the data line, and a manufacturing method thereof.

Description

REFERENCE TO RELATED APPLICATION[0001]This is a divisional of U.S. patent application Ser. No. 11 / 444,954 filed on May 31, 2006 which claims priority to Korean Patent Application No. 10-2005-0046146, filed on May 31, 2005 in the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entireties.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a thin film transistor (TFT) array panel and a manufacturing method for the same.[0004]2. Description of the Related Art[0005]Liquid crystal displays (LCDs) are one of the most widely used flat panel displays. An LCD includes a liquid crystal (LC) layer interposed between two panels provided with field-generating electrodes. The LCD displays images by applying voltages to the field-generating electrodes to generate an electric field in the LC layer that determines the orientations of LC molecules and their polarization of incident light. A conven...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/336
CPCG02F1/136227G02F1/136286H01L27/124G02F2001/136295H01L29/4908G02F1/1368G02F1/136295G02F1/136
Inventor YANG, SUNG-HOONSHIN, WON-SUKKIM, BYOUNG-JUNE
Owner SAMSUNG DISPLAY CO LTD