Systems and methods for bonding using microwave energy
a technology of system and method, applied in the field of semiconductor wafer bonding system, can solve the problems of different loss tangent values and specific heat capacities, and achieve the effect of reducing leakage of microwave radiation
Inactive Publication Date: 2012-06-07
BUDRAA NASSER K
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The present patent relates to a microwave bonding apparatus for bonding wafers using a microwave cavity. The apparatus includes a cavity housing with a plurality of inner metal surfaces that define a microwave cavity. A pressure housing is positioned within the cavity and a membrane is positioned between the pressure housing and the base surface. The membrane is supported by a support wall and is designed to deform when the pressure housing is pressurized. The apparatus also includes one or more gas control devices and features to provide a controlled gas environment. The apparatus can be used to bond wafers in a vacuum environment to reduce oxidation during bonding. The apparatus includes a base plate and a membrane plate with the membrane plate positioned to separate the wafers during the bonding process. The apparatus can also include one or more low loss-tangent materials, such as polytetrafluoroethylene or quartz plates, to facilitate the bonding process.
Problems solved by technology
Such localized heating can result from differences in loss tangent values and specific heat capacities.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0061]The present disclosure generally relates to semiconductor technology, and more particularly, to systems and methods for bonding two or more substrates using microwave energy. Two layers of substrates such as semiconductor wafers can be bonded by localized heating of a high loss-tangent interlayer (e.g., metal layer) via application of microwave energy. For the purpose of description herein, one or more interlayers are sometimes depicted or described as being formed from metal. It will be understood, however, that such interlayers can be formed from materials other than metal(s). Additional details about such bonding can be found, for example, in U.S. patent application Ser. No. 11 / 551,915, filed Oct. 23, 2006 and entitled “Systems and Methods for Bonding Semiconductor Substrates to Metal Substrates Using Microwave Energy,” which is incorporated herein by reference in its entirety.
[0062]In many of such bonding applications, it is desirable to bond two or more semiconductor wafe...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| diameter | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
| microwave energy | aaaaa | aaaaa |
Login to View More
Abstract
Disclosed are systems and methods for bonding wafers by use of microwave energy. Various components that facilitate relatively quick and efficient bonding provided by microwave energy are disclosed. In certain embodiments, devices and methods for applying desirable compression to the wafers can be implemented. In certain embodiments, devices and methods for providing a controlled gas environment such as vacuum can be implemented. In certain embodiments, devices and methods for maintaining the integrity of microwave mode of operation during the bonding process can be implemented. In certain embodiments, devices and methods for increasing throughput of the bonding process can be implemented.
Description
RELATED APPLICATIONS[0001]This application is a continuation of International Application No. PCT / US2010 / 045278, filed Aug. 12, 2010, which claims priority to and the benefit of the filing date of U.S. Provisional Patent Application No. 61 / 233,949, filed Aug. 14, 2009, the benefits of the filing dates of which are hereby claimed and the specifications of which are incorporated herein by this reference.BACKGROUND[0002]1. Field[0003]The present disclosure generally relates to the field of semiconductor technology, and more particularly, to systems and methods for bonding semiconductor wafers using microwave energy.[0004]2. Description of the Related Art[0005]Application of microwave energy can quickly and effectively bond two semiconductor wafers by localized heating of a metal interlayer between the two wafers. Such localized heating can result from differences in loss tangent values and specific heat capacities.[0006]For such microwave-based bonding process, there are a number of co...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(United States)
IPC IPC(8): B32B37/06B32B37/14
CPCH01L21/67092H01L21/67115H01L25/50H01L2924/0002H01L2924/00
Inventor BUDRAA, NASSER K.
Owner BUDRAA NASSER K