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Semiconductor device and method of manufacture thereof

a semiconductor and semiconductor module technology, applied in the direction of semiconductor/solid-state device details, semiconductor devices, electrical apparatus, etc., can solve the problems of insufficient cooling of semiconductor modules and inadequate securing of semiconductor modules to cooling bodies

Inactive Publication Date: 2013-02-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a semiconductor device that includes a heat conductive area made of metal and a layer of molded resin where the heat conductive area is exposed. The device also has a cooling body that is attached to the semiconductor module using a bonding material. The cooling body and the heat conductive material help to transfer heat away from the semiconductor module, which can help to improve its performance and prevent overheating. Overall, this design can improve the thermal management of the semiconductor device and improve its overall performance.

Problems solved by technology

It has been found, however, that the use of a material suitable for securing the semiconductor module to the cooling body may result in insufficient cooling of the semiconductor module.
On the other hand, the use of a material suitable for cooling the semiconductor module may result in inadequate securing of the semiconductor module to the cooling body.

Method used

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  • Semiconductor device and method of manufacture thereof
  • Semiconductor device and method of manufacture thereof
  • Semiconductor device and method of manufacture thereof

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first embodiment

[0022]FIG. 1 is a cross-sectional view of a semiconductor device 10 in accordance with a first embodiment of the present invention. The semiconductor device 10 is provided with a cooling body 12. The cooling body 12 is formed of metal, e.g., copper. A semiconductor module 14 is disposed above the cooling body 12. The semiconductor module 14 has a heat conductive portion 16 formed of metal and a molded resin 18 having a surface at which the heat conductive portion 16 is exposed. The semiconductor module 14 is formed, e.g., by encapsulating a semiconductor element, such as an IGBT, with resin by means of transfer molding.

[0023]The following description will be directed to components between the semiconductor module 14 and the cooling body 12. A bonding material 20 and a heat conductive material 22 are formed between the semiconductor module 14 and the cooling body 12. The bonding material 20 secures the molded resin 18 of the semiconductor module 14 to the cooling body 12. The bonding...

second embodiment

[0030]The following description of a semiconductor device in accordance with a second embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition. FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment. In this semiconductor device, the cooling body 12 has a cooling body groove 12a formed therein. The heat conductive material 22 is separated from a cooling material 30 by the cooling body groove 12a.

[0031]FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment. The cooling body groove 12a, formed in the cooling body 12, has a rectangular annular shape. FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment. The bonding material 30 is formed to surround the heat conductive material 22.

[003...

third embodiment

[0033]The following description of a semiconductor device in accordance with a third embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition. FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment. In this semiconductor device, a bonding material 40 is formed to extend to cover the side surfaces 18a of the molded resin 18. Further, the surface of the heat conductive portion 16 in contact with the heat conductive material 22 and the bottom surface 18b of the molded resin 18 form a single plane.

[0034]In the semiconductor device of the third embodiment, since the bonding material 40 extends to cover the side surfaces 18a of the molded resin 18, the bonding strength of the bonding material 40 between the semiconductor module 14 and the cooling body 12 is increased. Further, since the surface of the heat conductive portion 16 in contact with the ...

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PUM

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Abstract

A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device used, e.g., for high power control, and a method of manufacture thereof.[0003]2. Background Art[0004]Japanese Laid-Open Patent Publication No. 2006-100327 discloses a semiconductor device in which a semiconductor module formed by encapsulating a semiconductor element with resin is secured to a cooling fin (or cooling body) by means of screws. Japanese Laid-Open Patent Publication No. 2001-250890 also discloses related art.[0005]In order to reduce the number of parts in such a semiconductor device, it is desirable to secure the semiconductor module to the cooling body without using screws or the like. To accomplish this, the semiconductor module must be secured to the cooling body by way of some adhesive or bonding material which is disposed therebetween. It should be noted that such material must have substantial heat conductivity, as well as providing substantial ...

Claims

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Application Information

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IPC IPC(8): H01L23/34H01L21/56
CPCH01L23/36H01L24/32H01L24/83H01L29/0657H01L2224/83192H01L2924/10158H01L2224/83194H01L2924/10155H01L2924/13055H01L2224/8314H01L24/29H01L2924/00H01L2924/181Y10T156/10H01L23/34H01L2224/30051H01L2224/29014H01L2224/29013H01L2224/2919H01L2224/30519H01L2224/29191H01L2224/27013H01L2224/26175
Inventor MIYAMOTO, NOBORUKIKUCHI, MASAO
Owner MITSUBISHI ELECTRIC CORP