Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for fabricating a through-silicon via

a technology of throughsilicon and throughsilicon, which is applied in the direction of semiconductor/solid-state device manufacturing, basic electric elements, electric apparatus, etc., can solve the problem that it is not difficult to imagine that manufacturing designed for fabricating traditional integrated circuits may not meet every requirement for fabricating

Inactive Publication Date: 2014-09-18
IPENVAL CONSULTANT
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a method for making through-silicon vases. The process involves creating holes in a substrate, lining them with a layer of material, and shaping the material to create a smooth profile. This process can be repeated to reach a desired thickness of the material. The technical effect is to create a reliable and smooth method for making through-silicon vases.

Problems solved by technology

It would not be difficult to imagine a manufacturing designed for fabricating traditional integrated circuits may not satisfy every requirement needed for fabricating through silicon vias.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fabricating a through-silicon via
  • Method for fabricating a through-silicon via
  • Method for fabricating a through-silicon via

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007]The following is the detailed description of the preferred embodiments of this invention. All the elements, sub-elements, structures, materials, arrangements recited herein can be combined in any way and in any order into new embodiments, and these new embodiments should fall in the scope of this invention defined by the appended claims. A person skilled in the art, upon reading this invention, should be able to modify and change the elements, sub-elements, structures, materials, arrangements recited herein without being apart from the principle and spirit of this invention. Therefore, these modifications and changes should fall in the scope of this invention defined only by the following claims.

[0008]There are a lot of embodiments and figures in this application. To avoid confusions, similar components are represented by same or similar numerals. To avoid complexity and confusions, only one of the repetitive components is marked. Figures are meant to deliver the principle and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for fabricating a through-silicon via comprises the following steps. Provide a substrate. Form a through silicon hole in the substrate having a diameter of at least 1 μm and a depth of at least 5 μm. Perform a first chemical vapor deposition process with a first etching / deposition ratio to form a dielectric layer lining the bottom and sidewall of the through silicon hole and the top surface of the substrate. Perform a shape redressing treatment with a second etching / deposition ratio to change the profile of the dielectric layer. Repeat the first chemical vapor deposition process and the shape redressing treatment at least once until the thickness of the dielectric layer reaches to a predetermined value.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a method for fabricating a through-silicon via.BACKGROUND OF THE INVENTION[0002]To save precious layout space or increase interconnection efficiency, multiple chips of integrated circuits (ICs) can be stacked together as a single IC package. To that end, a three-dimensional (3D) stack packaging technology is used to package the chips of integrated circuits. Through-silicon vias (TSVs) are widely used to accomplish the 3D stack packaging technology. A through-silicon via is a vertical conductive via completely passing through a silicon wafer, a silicon board, a substrate of any material or die. Nowadays, a 3D integrated circuit (3D IC) is applied to a lot of fields such as memory stacks, image sensors or the like.[0003]Unlike traditional integrated circuits, a through silicon via comes with a size of hundred fold or more. It would not be difficult to imagine a manufacturing designed for fabricating traditional integrated ci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768
CPCH01L21/76846H01L21/76898
Inventor HUANG, CHAO-YUANHO, YUEH-FENGYANG, MING-SHENGCHEN, HWI-HUANG
Owner IPENVAL CONSULTANT