Graphene-based laminate and method of preparing the same

Active Publication Date: 2017-08-03
VERSARIEN PLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a method to make a graphene-based laminate that is more stable and can move electrons better. The process is economical and can improve the performance of the laminate.

Problems solved by technology

However, while these techniques may easily change the charge-carrier density, doping stability may be degraded.

Method used

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  • Graphene-based laminate and method of preparing the same
  • Graphene-based laminate and method of preparing the same
  • Graphene-based laminate and method of preparing the same

Examples

Experimental program
Comparison scheme
Effect test

example 3

on of Graphene-Based Laminate

[0123]A graphene-based laminate was prepared in the same manner as in Example 1, except that a thickness of the LiF layer deposited on the graphene layer was 10 nm instead of 1 nm.

example 4

on of Back-Gated FET

[0126]The back-gated FET shown in FIG. 4 was prepared.

[0127]100 nm of Au patterned by a lift-off process using a photoresist AZ5214 was used as a source electrode and a drain electrode. As a channel layer, the graphene-based laminate prepared in Example 1 was used. A length and width of the channel layer was 20 μm and 19 μm, respectively. The insulating layer was SiO2 having a thickness of 300 nm.

examples 5 and 6

ack-Gated FET

[0128]Back-gated FETs were prepared in the same manner as in Example 4, except that the graphene-based laminates prepared in Examples 2 and 3 were respectively used as a channel layer instead of the graphene-based laminate prepared in Example 1.

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PUM

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Abstract

Provided are a graphene-based laminate and a method of preparing the graphene-based laminate. The graphene-based laminate may include a substrate; a graphene layer formed on at least one surface of the substrate; and an inorganic layer formed on the graphene layer and including a fluorine-containing lithium compound.

Description

CROSS-REFERENCE TO THE RELATED APPLICATION[0001]This application claims priority from Korean Patent Application No. 10-2016-0011873 filed on Jan. 29, 2016 in the Korean Intellectual Property Office the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]Apparatuses and methods consistent with exemplary embodiments of the inventive concept relate to a graphene-based laminate and a method of preparing the graphene-based laminate.[0004]2. Description of the Related Art[0005]Graphene has a two-dimensional structure having a hexagonal shape, in which a distance between two adjacent carbon atoms is about 1.42 Å. Graphene has excellent characteristics in terms of strength, thermal conductivity, and electron mobility, and thus, may be used in a transmissive electrode or various graphene-based electronic devices.[0006]Accordingly, sheet resistivity or electric characteristics of graphene for electrode application have been controlled by using...

Claims

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Application Information

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IPC IPC(8): H01L29/16H01L51/52H01L21/02H01L29/786
CPCH01L29/1606H01L29/78684H01L21/02527H01L51/5221H01L51/5206H01L23/29H01L29/778H10K50/816B82Y40/00B82Y30/00
Inventor PARK, CHONGHANCHO, SEUNGMINSEO, SUNAESHIN, SOMYEONG
Owner VERSARIEN PLC
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